Биполярный транзистор 2N5101 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5101
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 15 pf
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO5F
2N5101 Datasheet (PDF)
2n5109.pdf
2N5109www.centralsemi.comSILICONDESCRIPTION:NPN RF TRANSISTORThe CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.MARKING: FULL PART NUMBERTO-39 CASEMAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL UNITSCollector-Base Voltage VCBO 40 VColle
2n5108.pdf
2N5108NPN SILICON HIGH FREQUENCY TRANSISTORDESCRIPTION:The 2N5108 is a Designed forGeneral Purpose Class C AmplifierApplications Up to 1 GHz.PACKAGE STYLE TO-39FEATURES: GPE = 6.0 dB Typ. at 1.0 GHz FT = 1,500 MHz Typ. at 15 V/ 50 mA Hermetic TO-39 PackageMAXIMUM RATINGSIC 400 mAVCB55 VVCE30 VPDISS3.5 W @ TC = 25 OCTJ-65 to +200 OC1 = Emitter 2
2n5109.pdf
Data Sheet No. 2N5109Generic Part Number:Type 2N51092N5109Geometry 1007Polarity NPNREF: MIL-PRF-19500/453Qual Level: JAN - JANTXVFeatures: VHF-UHF amplifier silicon transis-tor. Housed in TO-39 case. Also available in chip form usingthe 1007 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/398 whichTO-39Semicoa meets in all cases.M
2n5108.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5108DESCRIPTIONHigh Current-Gain Bandwidth Product: f = 1200MHz (Min) @V = 10V,I = 50mAT CE ELow Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose Class C amplifier applicationsup to 1 GHzABS
2n5109.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5109DESCRIPTIONHigh Current-Gain Bandwidth Product: f = 1200MHz (Min) @V = 10V,I = 50mAT CE ELow Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose Class C amplifier applicationsup to 1 GHzABS
Другие транзисторы... 2N5095 , 2N5096 , 2N5097 , 2N5097S , 2N5098 , 2N5099 , 2N51 , 2N5100 , C5198 , 2N5102 , 2N5106 , 2N5107 , 2N5108 , 2N5108A , 2N5109 , 2N5109A , 2N5109B .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050