Биполярный транзистор 2N5107 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5107
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO39
2N5107 Datasheet (PDF)
2n5109.pdf
2N5109www.centralsemi.comSILICONDESCRIPTION:NPN RF TRANSISTORThe CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.MARKING: FULL PART NUMBERTO-39 CASEMAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL UNITSCollector-Base Voltage VCBO 40 VColle
2n5108.pdf
2N5108NPN SILICON HIGH FREQUENCY TRANSISTORDESCRIPTION:The 2N5108 is a Designed forGeneral Purpose Class C AmplifierApplications Up to 1 GHz.PACKAGE STYLE TO-39FEATURES: GPE = 6.0 dB Typ. at 1.0 GHz FT = 1,500 MHz Typ. at 15 V/ 50 mA Hermetic TO-39 PackageMAXIMUM RATINGSIC 400 mAVCB55 VVCE30 VPDISS3.5 W @ TC = 25 OCTJ-65 to +200 OC1 = Emitter 2
2n5109.pdf
Data Sheet No. 2N5109Generic Part Number:Type 2N51092N5109Geometry 1007Polarity NPNREF: MIL-PRF-19500/453Qual Level: JAN - JANTXVFeatures: VHF-UHF amplifier silicon transis-tor. Housed in TO-39 case. Also available in chip form usingthe 1007 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/398 whichTO-39Semicoa meets in all cases.M
2n5108.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5108DESCRIPTIONHigh Current-Gain Bandwidth Product: f = 1200MHz (Min) @V = 10V,I = 50mAT CE ELow Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose Class C amplifier applicationsup to 1 GHzABS
2n5109.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5109DESCRIPTIONHigh Current-Gain Bandwidth Product: f = 1200MHz (Min) @V = 10V,I = 50mAT CE ELow Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose Class C amplifier applicationsup to 1 GHzABS
Другие транзисторы... 2N5097S , 2N5098 , 2N5099 , 2N51 , 2N5100 , 2N5101 , 2N5102 , 2N5106 , BD777 , 2N5108 , 2N5108A , 2N5109 , 2N5109A , 2N5109B , 2N5109UB , 2N511 , 2N5110 .
Список транзисторов
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