MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PZT2907AT1/DPNP SiliconPZT2907AT1Epitaxial Transistor Motorola Preferred DeviceThis PNP Silicon Epitaxial transistor is designed for use in linear andswitching applications. The device is housed in the SOT-223 package which isSOT-223 PACKAGEdesigned for medium power surface mount applications.PNP SILICON NPN C

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageM3D087PZT2907APNP switching transistorProduct data sheet 1999 Apr 14Supersedes data of 1997 Jun 02 NXP Semiconductors Product data sheetPNP switching transistor PZT2907AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 base2, 4 collectorAPPLICATIONS3 emitter Swi

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PZT2907APNP switching transistor1999 Apr 14Product specificationSupersedes data of 1997 Jun 02Philips Semiconductors Product specificationPNP switching transistor PZT2907AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 base2, 4 collectorAPPLICATIONS3 emitter

PN2907A MMBT2907A PZT2907ACCEECBC TO-92BSOT-23B SOT-223EMark: 2FPNP General Purpose AmplifierThis device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA. Sourcedfrom Process 63.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBO C

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PZT2907APNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial transistor is designed for use in linearand switching applications. The device is housed in the SOT-223package which is designed for medium power surface mounthttp://onsemi.comapplications.4Features1 NPN Complement is PZT2222AT123 The SOT-223 Package can be Soldered Using Wave or ReflowSOT-223

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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UNISONIC TECHNOLOGIES CO., LTD PZT2907A Preliminary PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION This UTC PZT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 600 mA. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT2907AL-AA3-R PZT2907AG-AA3-R SOT-2

PZT2907A PNP Silicon Silicon Planar Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-223 DESCRIPTION The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications. MARKING Collector2907A Base = Date code Millime

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2907A TRANSISTOR (PNP) FEATURES SOT-223 Epitaxial planar die construction Complementary PNP Type available(PZT2222A) MARKING: 1. BASE 2. COLLECTOR 3. EMITTER Solid dot = Green molding compound device,if none,the normal device. MAXIMUM RATINGS (Ta=25 unless otherwise no

PZT2907A SOT-223 Transistor(PNP)SOT-2231. BASE 2. COLLECTOR 1 3. EMITTER Features Epitaxial planar die construction Complementary PNP Type available(PZT2222A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base

PZT2907APNP Silicon Planar Epitaxial TransistorCOLLECTOR2, 4 SOT-2234P b Lead(Pb)-Free1. BASEBASE2.COLLECTOR113.EMITTER24.COLLECTOR33EM ITTERABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -60 VdcCollector-Base Voltage VCBOVdc-60Emitter-Base Voltage VEBO-5.0 VdcCollector Current (DC) IC(DC)-600 mAdc

SMD Type TransistorsPNP TransistorsPZT2907A (KZT2907A)Unit:mmSOT-2236.500.23.000.14 Features Epitaxial planar die construction Complementary to PZT2222A1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

PZT2907AT1Preferred Device PNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial transistor is designed for use in linearand switching applications. The device is housed in the SOT-223package which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesCOLLECTOR2, 4 NPN Complement is PZT2222AT1 The SOT-223 package can be soldered usin

PNP Silicon Switching Transistors PZT 2907PZT 2907 A High DC current gain: 0.1 mA to 500 mA Low collector-emitter saturation voltage Complementary types: PZT 2222 (NPN)PZT 2222 A (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4PZT 2907 ZT 2907 Q62702-Z2028 B C E C SOT-223PZT 2907 A ZT 2907 A Q62702-Z2025Maximum RatingsParameter Symbol Valu