Справочник транзисторов. 2N5112

 

Биполярный транзистор 2N5112 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N5112
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 34 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Ёмкость коллекторного перехода (Cc): 500 pf
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO59

 Аналоги (замена) для 2N5112

 

 

2N5112 Datasheet (PDF)

 9.1. Size:85K  central
2n5114 2n5115 2n5116.pdf

2N5112

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.2. Size:64K  intersil
2n5117 2n5118 2n5119.pdf

2N5112
2N5112

 9.3. Size:33K  calogic
2n5114 2n5115 2n5116.pdf

2N5112
2N5112

P-Channel JFET SwitchCORPORATION2N5114 2N5116GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)AIdeal for inverting switching or "Virtual Gnd" switching intoinverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30Vsignals can be handled using only +5V logic (TTL or CMOS). G

 9.4. Size:43K  microsemi
mx2n5114 mx2n5115 mx2n5116.pdf

2N5112
2N5112

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C

 9.5. Size:235K  microsemi
2n5114ub 2n5114ube3 2n5115ub 2n5115ube3 2n5116ub 2n5116ube3.pdf

2N5112
2N5112

2N5114UB thru 2N5116UB Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For t

 9.6. Size:131K  microsemi
2n5114e3 2n5115e3 2n5116e3.pdf

2N5112
2N5112

2N5114 thru 2N5116 Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest infor

Другие транзисторы... 2N5108A , 2N5109 , 2N5109A , 2N5109B , 2N5109UB , 2N511 , 2N5110 , 2N5111 , 13009 , 2N5113 , 2N5117 , 2N5118 , 2N5119 , 2N511A , 2N511B , 2N512 , 2N5120 .

 

 
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