Биполярный транзистор S2000AF - описание производителя. Основные параметры. Даташиты.
Наименование производителя: S2000AF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 1500 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Ёмкость коллекторного перехода (Cc): 125 pf
Статический коэффициент передачи тока (hfe): 2.2
Корпус транзистора: ISOWATT218
S2000AF Datasheet (PDF)
s2000af.pdf
S2000AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tigh hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pac
s2000af.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AF DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS
s2000afi.pdf
S2000AFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N).APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR3TV21DESCRIPTIONThe S2000AFI is manufactured usingISOWATT218Multiepitaxial Mesa technology for cost-effectivehigh performance and use
s2000afi.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITION
s2000a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol
s2000a1.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000A1 DESCRIPTION With TO-3PH package High voltage ,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING(See Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 sim
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050