DATA SHEETNPN SILICON TRANSISTOR2SC2570AHIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.FEATURES Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA Wide dynamic range : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 1

2SC2577 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1102ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector

2SC2578 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1104 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 100 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 7 A

JMnic Product Specification Silicon NPN Power Transistors 2SC2577 DESCRIPTION With TO-3PN package Complement to type 2SA1102 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs

JMnic Product Specification Silicon NPN Power Transistors 2SC2579 DESCRIPTION With TO-3PN package High power dissipation High current capability APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2578 DESCRIPTION With TO-3PN package Complementary to 2SA1104 High Power Dissipation High Current Capability APPLICATIONS Audio power amplifier DC TO DC Converter PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and sym

isc Silicon NPN Power Transistor 2SC2577DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1102Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2570ADESCRIPTIONLow Noise and High GainNF = 1.5 dB TYP.Ga = 8 dB TYP. @f = 1.0 GHz, V = 10 V, I = 5 mACE CWide Dynamic RangeNF = 1.9 dB TYP.Ga = 9 dB TYP. @f = 1.0 GHz, V = 10 V, I = 15 mACE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon NPN Power Transistor 2SC2579DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

isc Silicon NPN Power Transistor 2SC2578DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1103Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV