Биполярный транзистор SD2222A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SD2222A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: LCC2
SD2222A Datasheet (PDF)
2sd2222.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2222 DESCRIPTION With TO-3PL package Complement to type 2SB1470 High forward current transfer ratio hFE Low saturation voltage VCE(sat) DARLINGTON APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified out
2sd2222.pdf
isc Silicon NPN Darlington Power Transistor 2SD2222DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh DC Current Gain-: h = 3500( Min.) @(I = 7A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 3.0V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1470Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
2sd2224.pdf
Ordering number:EN3366PNP/NPN Epitaxial Planar Silicon Transistors2SB1472/2SD2224Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049B[2SB1472/2SD2224]Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO.E :
2sd2223.pdf
Ordering number:EN3365PNP/NPN Epitaxial Planar Silicon Transistors2SB1471/2SD2223Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049B[2SB1471/2SD2223]Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO.E :
2sd2226k.pdf
2SD2226KDatasheetGeneral Purpose Transistor (50V, 150mA)lOutlinel SOT-346 Parameter Value SC-59 VCEO50VIC150mASMT3lFeatures lInner circuitl l1)High DC current gain.2)High emitter-base voltage. (VCBO=12V)3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA)lApplicationlLow frequency amplifierlPackagi
2sd2227s.pdf
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base
2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base
2sd2225.pdf
Transistor2SD2225Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB14732.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO of 120V.Optimum for low-frequency driver amplification. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maxim
2sd2220.pdf
Power Transistors2SD2220Silicon NPN triple diffusion planar type DarlingtonFor low-frequency amplificationUnit: mm7.5 0.2 4.5 0.290Features0.65 0.1 0.85 0.1Suitable for the driver circuit of a motor, a printer hammer andlike that, since this transistor is designed for the high forward1.0 0.10.8C 0.8Ccurrent transfer ratio hFE0.7 0.1 0.7 0.1A shunt r
2sd2225 e.pdf
Transistor2SD2225Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB14732.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO of 120V.Optimum for low-frequency driver amplification. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maxim
csd22204w.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD22204WSLPS559 MARCH 2015CSD22204W 8 V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low ResistanceTA = 25C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mmVDS Drain-to-Source Voltage 8 V Pb FreeQg Gate Charge Total (4.5 V) 18.9 nC Gate ES
csd22202w15.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD22202W15SLPS431B JUNE 2013 REVISED DECEMBER 2014CSD22202W15 P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low ResistanceTA = 25C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mmVDS Drain-to-Source Voltage 8 V Pb FreeQg Gate Charge Total (4.5
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050