Справочник транзисторов. SD2222AF

 

Биполярный транзистор SD2222AF - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: SD2222AF
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.8 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 8 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: LCC2

 Аналоги (замена) для SD2222AF

 

 

SD2222AF Datasheet (PDF)

 8.1. Size:83K  jmnic
2sd2222.pdf

SD2222AF
SD2222AF

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2222 DESCRIPTION With TO-3PL package Complement to type 2SB1470 High forward current transfer ratio hFE Low saturation voltage VCE(sat) DARLINGTON APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified out

 8.2. Size:204K  inchange semiconductor
2sd2222.pdf

SD2222AF
SD2222AF

isc Silicon NPN Darlington Power Transistor 2SD2222DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh DC Current Gain-: h = 3500( Min.) @(I = 7A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 3.0V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1470Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

 9.1. Size:135K  sanyo
2sd2224.pdf

SD2222AF
SD2222AF

Ordering number:EN3366PNP/NPN Epitaxial Planar Silicon Transistors2SB1472/2SD2224Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049B[2SB1472/2SD2224]Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO.E :

 9.2. Size:133K  sanyo
2sd2223.pdf

SD2222AF
SD2222AF

Ordering number:EN3365PNP/NPN Epitaxial Planar Silicon Transistors2SB1471/2SD2223Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049B[2SB1471/2SD2223]Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO.E :

 9.3. Size:279K  nec
2sd2228.pdf

SD2222AF
SD2222AF

 9.4. Size:1265K  rohm
2sd2226k.pdf

SD2222AF
SD2222AF

2SD2226KDatasheetGeneral Purpose Transistor (50V, 150mA)lOutlinel SOT-346 Parameter Value SC-59 VCEO50VIC150mASMT3lFeatures lInner circuitl l1)High DC current gain.2)High emitter-base voltage. (VCBO=12V)3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA)lApplicationlLow frequency amplifierlPackagi

 9.5. Size:78K  rohm
2sd2227s.pdf

SD2222AF
SD2222AF

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base

 9.6. Size:85K  rohm
2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf

SD2222AF
SD2222AF

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base

 9.7. Size:39K  panasonic
2sd2225.pdf

SD2222AF
SD2222AF

Transistor2SD2225Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB14732.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO of 120V.Optimum for low-frequency driver amplification. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maxim

 9.8. Size:39K  panasonic
2sd2220.pdf

SD2222AF
SD2222AF

Power Transistors2SD2220Silicon NPN triple diffusion planar type DarlingtonFor low-frequency amplificationUnit: mm7.5 0.2 4.5 0.290Features0.65 0.1 0.85 0.1Suitable for the driver circuit of a motor, a printer hammer andlike that, since this transistor is designed for the high forward1.0 0.10.8C 0.8Ccurrent transfer ratio hFE0.7 0.1 0.7 0.1A shunt r

 9.9. Size:44K  panasonic
2sd2225 e.pdf

SD2222AF
SD2222AF

Transistor2SD2225Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB14732.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO of 120V.Optimum for low-frequency driver amplification. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maxim

 9.10. Size:1055K  texas
csd22204w.pdf

SD2222AF
SD2222AF

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD22204WSLPS559 MARCH 2015CSD22204W 8 V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low ResistanceTA = 25C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mmVDS Drain-to-Source Voltage 8 V Pb FreeQg Gate Charge Total (4.5 V) 18.9 nC Gate ES

 9.11. Size:1426K  texas
csd22202w15.pdf

SD2222AF
SD2222AF

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD22202W15SLPS431B JUNE 2013 REVISED DECEMBER 2014CSD22202W15 P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low ResistanceTA = 25C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mmVDS Drain-to-Source Voltage 8 V Pb FreeQg Gate Charge Total (4.5

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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