2N5150 - описание и поиск аналогов

2N5150 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

2N5153HR Hi-Rel PNP bipolar transistor 80 V, 5 A Datasheet - production data Features 1 3 2 Parameter Value TO-257 VCEO 80 V TO-39 IC (max.) 5 A 2 hFE at 10 V -150 mA > 70 1 3 Operating temperature -65 C to +200 C range SMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristics Figure 1. Internal schematic diagram ESCC qualified European preferr

2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features BVCEO 80 V 1 3 IC (max) 5 A 2 HFE at 10 V - 150 mA > 70 TO-39 TO-257 Operating temperature range - 65 C to + 200 C 2 1 3 Hi-Rel NPN bipolar transistor Linear gain characteristics SMD.5 ESCC qualified European preferred part list - EPPL Figure 1. Internal schematic diagr

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The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A Hermetic Ceramic Surface Mount SMD1 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curren

2N5152SMD05 2N5154SMD05 MECHANICAL DATA NPN BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5152SMD05 and the 2N5154SMD05 are silicon expitaxial planar NPN transistors in a Ceramic S

2N5153SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

2N5151 2N5153 MECHANICAL DATA HIGH SPEED Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) MEDIUM VOLTAGE 7.75 (0.305) 8.51 (0.335) SWITCHES 4.19 (0.165) 4.95 (0.195) DESCRIPTION 0.89 max. (0.035) 12.70 The 2N5151 and the 2N5153 are silicon (0.500) 7.75 (0.305) min. 8.51 (0.335) expitaxial planar PNP transistors in dia. jedec TO-39 metal case intended for use in switc

SILICON NPN POWER TRANSISTOR 2N5154X-220M Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base

2N5152A Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A Hermetic Metal TO39 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Current 2A ICM Pea

2N5154XX MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH SPEED 6.10 (0.240) 6.60 (0.260) MEDIUM VOLTAGE SWITCH 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 2 (0.100) 1 3 DESCRIPTION 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) The 2N5154XX is a silicon expitaxial

2N5154X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

2N5152 2N5154 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION ! The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec

2N5154XSMD05 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED 7.54 (0.296) 0.76 (0.030) MEDIUM VOLTAGE min. 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. SWITCH 0.127 (0.005) 1 3 2 DESCRIPTION 0.127 (0.005) The 2N5154XSMD05 is a silicon expitaxial 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) planar NPN transistors in a Ceramic Surface max. 7.26 (0.286) Mount

2N5154XSMD MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCH DESCRIPTION The 2N5154XSMD is a silicon expitaxial planar NPN transistors in a Ceramic Surface Mount Package for use in Switching and Linear applications.

2N5152SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT 7.54 (0.296) PACKAGE FOR HIGH-REL AND 0.76 (0.030) min. 3.175 (0.125) SPACE APPLICATIONS 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) 1 3 DESCRIPTION 2 The 2N5151XSMD05 is a silicon expitaxial planar PNP transistor in a Ceramic Surface Mount Package for use in Switching and 0.127 (

2N5151SMD05 2N5153SMD05 MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5151SMD05 and the 2N5153SMD05 are silicon expitaxial planar PNP transistors in a Ceramic S

2N5151SMD05 2N5153SMD05 MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5151SMD05 and the 2N5153SMD05 are silicon expitaxial planar PNP transistors in a Ceramic S

SILICON EPITAXIAL NPN TRANSISTOR 2N5154N1B Hermetic Ceramic Surface Mount SMD0.5 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curr

2N5151-220M 2N5153-220M MECHANICAL DATA Dimensions in mm (inches) 4.70 HIGH SPEED 5.00 10.41 0.70 10.67 MEDIUM VOLTAGE 0.90 SWITCHES 3.56 Dia. 3.81 DESCRIPTION 1 2 3 The 2N5151-220M and the 2N5153-220M are silicon expitaxial planar PNP transistors in TO-220 (JEDEC TO-257AB) metal case intended for use in switching applications. The complementary NPN types are the 0.89 2

2N5152SMD05 2N5154SMD05 MECHANICAL DATA NPN BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5152SMD05 and the 2N5154SMD05 are silicon expitaxial planar NPN transistors in a Ceramic S

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5157 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL PA

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154 JANTX 2N5152L 2N5154L JANTXV 2N5152U3 2N5154U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153 JANTX 2N5151L 2N5153L JANTXV 2N5151U3 2N5153U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Te

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154 JANTX 2N5152L 2N5154L JANTXV 2N5152U3 2N5154U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153 JANTX 2N5151L 2N5153L JANTXV 2N5151U3 2N5153U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Te

PNP Power Silicon Transistor 2N5151, 2N5151L & 2N5153, 2N5153L Features Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 TO-5 Package 2N5151L, 2N5153L TO-39 (TO-205AD) Package 2N5151, 2N5153 Maximum Ratings (TC = +25 C unless otherwise noted) Ratings Symbol Value Units Collector - Emitter Voltage VCEO 80 Vdc Collector - Base V

NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/544 TO-5 Package 2N5152L, 2N5154L TO-39 (TO-205AD) Package 2N5152, 2N5154 Maximum Ratings (TC = +25 C unless otherwise noted) Ratings Symbol Value Units Collector - Emitter Voltage VCEO 80 Vdc Collector - Base V

NPN High Power Silicon Transistors 2N3902 & 2N5157 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N3902 2N5157 Units Collector - Emitter Voltage VCEO 400 500 Vdc Emitter - Base Voltage VEBO 5.0 6.0 Vdc Collector - Base Voltage VCBO 7.0 Vdc Base Current IB 2.0 Adc Collector Current IC 3.5 Adc Total

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5157 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=