Биполярный транзистор 2N5153 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5153
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 12 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 560 MHz
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO39
2N5153 Datasheet (PDF)
2n5151 2n5152 2n5153 2n5154.pdf
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2n5151 2n5153.pdf
2N51512N5153MECHANICAL DATAHIGH SPEED Dimensions in mm (inches)8.89 (0.35)9.40 (0.37) MEDIUM VOLTAGE 7.75 (0.305)8.51 (0.335)SWITCHES4.19 (0.165)4.95 (0.195)DESCRIPTION0.89max.(0.035)12.70The 2N5151 and the 2N5153 are silicon(0.500)7.75 (0.305)min.8.51 (0.335)expitaxial planar PNP transistors india.jedec TO-39 metal case intended foruse in switc
2n5151 2n5151l 2n5153 2n5153l.pdf
PNP Power Silicon Transistor2N5151, 2N5151L & 2N5153, 2N5153LFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/545 TO-5 Package: 2N5151L, 2N5153LTO-39 (TO-205AD) Package: 2N5151, 2N5153Maximum Ratings (TC = +25C unless otherwise noted)Ratings Symbol Value UnitsCollector - Emitter Voltage VCEO 80 VdcCollector - Base V
2n5153hr.pdf
2N5153HRHi-Rel PNP bipolar transistor 80 V, 5 ADatasheet - production dataFeatures132Parameter ValueTO-257 VCEO 80 VTO-39 IC (max.) 5 A2hFE at 10 V -150 mA > 7013Operating temperature -65 C to +200 CrangeSMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristicsFigure 1. Internal schematic diagram ESCC qualified European preferr
2n5153smd.pdf
2N5153SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n5153smd05.pdf
2N5151SMD052N5153SMD05MECHANICAL DATAPNP BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5151SMD05 and the 2N5153SMD05 aresilicon expitaxial planar PNP transistors in aCeramic S
2n5153u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153JANTX 2N5151L 2N5153LJANTXV 2N5151U3 2N5153U3JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Te
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050