Биполярный транзистор SGSF343
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: SGSF343
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 85
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1000
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450
V
Макcимальный постоянный ток коллектора (Ic): 8
A
Предельная температура PN-перехода (Tj): 175
°C
Корпус транзистора:
TO220
Аналоги (замена) для SGSF343
SGSF343
Datasheet (PDF)
8.1. Size:82K st
sgsf344.pdf SGSF344HIGH VOLTAGE FASTSWITCHING NPNPOWER TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS: SWITCH MODE POWER SUPPLIES HORIZONTAL DEFLECTION FOR COLOURTVS AND MONITORS32DESCRIPTION1The SGSF344 is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-220high performance and uses a Hollow Emitte
9.1. Size:85K st
sgsf324.pdf SGSF324HIGH VOLTAGE FASTSWITCHING NPNPOWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEEDAPPLICATIONS: SWITCH MODE POWER SUPPLIESDESCRIPTION32The SGSF324 is manufactured using1Multiepitaxial Mesa technology for cost-effectivehigh performance and uses a Hollow EmitterTO-220structure to enhance switchin
9.2. Size:90K st
sgsf313.pdf SGSF313SGSF313PIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS HIGH VOLTAGE CAPABILITY (450V VCEO) VERY HIGH SWITCHING SPEED: t = 35nsfTYPICAL AT IC = 2.5A, IB1 = 0.5A, VBEoff = -5V LOW SATURATION VOLTAGEo COMPLETE CHARACTERIZATION AT 100 C U.L. RECOGNISED ISOWATT220 PACKAGE(U.L. FILE # E81734 (N)).APPLICATION 3 32 2 SWITCH MODE POWER SUPPLIES11 FLYBACK AND
9.3. Size:151K inchange semiconductor
sgsf313pi.pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor SGSF313PI DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed to be used as switch in high efficency off-line (220V mains) switching power supplies for consumer applications like sets VCRs and mon
9.4. Size:111K inchange semiconductor
sgsf313.pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor SGSF313 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed to be used as switch in high efficency off-line (220V mains) switching power supplies for consumer applications like sets VCRs and monit
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