SK3040 - описание и поиск аналогов

 9.1. Size:251K  1
 2sk3042.pdf 

Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed EAS > 45mJ unit mm High-speed switching tf = 30ns 4.6 0.2 9.9 0.3 2.9 0.2 No secondary breakdown 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment 1.4 0.2 2.6 0.1 1.6 0.2 Switching powe

 9.2. Size:79K  sanyo
 2sk304.pdf 

Ordering number EN850E N-Channel Junction Silicon FET 2SK304 Low-Frequency Amplifier Applications Features Package Dimensions Ideal for potentiometers, analog switches, low unit mm frequency amplifiers, and constant-current regula- 2034A tors. [2SK304] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate 3 Drain 3.0 SANYO SPA 3.8nom Specifications Absolute

 9.3. Size:72K  panasonic
 2sk3049.pdf 

Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed unit mm High-speed switching 4.6 0.2 9.9 0.3 2.9 0.2 Low ON-resistance No secondary breakdown 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor 1.4 0.2 2.6 0.1 1.6 0.2 Control equipment Switching power s

 9.4. Size:42K  panasonic
 2sk3046.pdf 

Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed EAS > 130mJ unit mm VGSS = 30V guaranteed 4.6 0.2 High-speed switching tf = 60ns 9.9 0.3 2.9 0.2 No secondary breakdown Applications 3.2 0.1 Contactless relay Diving circuit for a solenoid Driving circuit for a motor 1.4 0.2 2.6 0.1 1.6 0.2 Control

 9.5. Size:244K  panasonic
 2sk3048.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3048 Silicon N-channel power MOSFET Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 Avalanche energy capability guaranteed High-speed switching 3.2 0.1 Low on-resistance No secondary breakdown Applications Non-contact relay 1.4 0.2 Solenoid drive 2.6 0.1 1.6 0.2

 9.6. Size:94K  panasonic
 2sk3047.pdf 

Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 Avalanche energy capability guaranteed EAS > 15 mJ Gate-source surrender voltage VGSS 30 V guaranteed 3.2 0.1 High-speed switching No secondary breakdown Applications Non-contact relay 1.4 0.2 Solenoid drive 2.6 0.1 1.6 0.2 Motor dri

 9.7. Size:25K  panasonic
 3sk304.pdf 

High Frequency FETs 3SK285 3SK304(Tentative), 3SK308(Tentative) Silicon N-Channel MOS +0.2 3SK304 2.8 0.3 Unit mm For UHF amplification +0.2 0.65 0.15 1.5 0.3 0.65 0.15 0.5R Features 4 1 Though low voltage operation, performance is equivalent to the con- ventional product. 3 2 Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magaz

 9.8. Size:96K  panasonic
 2sk3045.pdf 

Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 Avalanche energy capability guaranteed EAS > 15.6 mJ Gate-source surrender voltage VGSS 30 V guaranteed 3.2 0.1 High-speed switching No secondary breakdown Applications Non-contact relay 1.4 0.2 Solenoid drive 2.6 0.1 1.6 0.2 Motor d

 9.9. Size:246K  panasonic
 2sk3043.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3043 Silicon N-channel power MOSFET Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 Avalanche energy capability guaranteed EAS > 100 mJ Gate-source surrender voltage VGSS 30 V guaranteed 3.2 0.1 High-speed switching No secondary breakdown Applications Non-contact rela

 9.10. Size:243K  panasonic
 2sk3044.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3044 Silicon N-channel power MOSFET Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 Avalanche energy capability guaranteed EAS > 130 mJ Gate-source surrender voltageVGSS 30 V guaranteed 3.2 0.1 High-speed switching No secondary breakdown Applications Non-contact relay

 9.11. Size:280K  inchange semiconductor
 2sk3049.pdf 

isc N-Channel MOSFET Transistor 2SK3049 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.12. Size:279K  inchange semiconductor
 2sk3042.pdf 

isc N-Channel MOSFET Transistor 2SK3042 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R =0.6 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 9.13. Size:279K  inchange semiconductor
 2sk3046.pdf 

isc N-Channel MOSFET Transistor 2SK3046 FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 9.14. Size:280K  inchange semiconductor
 2sk3048.pdf 

isc N-Channel MOSFET Transistor 2SK3048 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.15. Size:280K  inchange semiconductor
 2sk3047.pdf 

isc N-Channel MOSFET Transistor 2SK3047 FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 7 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 9.16. Size:279K  inchange semiconductor
 2sk3045.pdf 

isc N-Channel MOSFET Transistor 2SK3045 FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 4 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.17. Size:279K  inchange semiconductor
 2sk3043.pdf 

isc N-Channel MOSFET Transistor 2SK3043 FEATURES Drain Current I =5A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R =1.3 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 9.18. Size:279K  inchange semiconductor
 2sk3044.pdf 

isc N-Channel MOSFET Transistor 2SK3044 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R =0.75 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d