Биполярный транзистор SML12303 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SML12303
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 220 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO3
SML12303 Datasheet (PDF)
sml120l16.pdf
SML120L16TO264AA Package Outline.Dimensions in mm (inches)1.80 (0.071)2.01 (0.079) NCHANNEL4.60 (0.181) 19.51 (0.768)5.21 (0.205) 26.49 (0.807)3.10 (0.122)ENHANCEMENT MODE3.48 (0.137)HIGH VOLTAGEPOWER MOSFETSVDSS 1200V1 2 32.29 (0.090)ID(cont) 16A2.69 (0.106)2.79 (0.110)3.18 (0.125)RDS(on) 0.8000.48 (0.019) 0.76 (0.030)0.84 (0.033) 1.30 (0.051)
sml1201b8.pdf
SML1201B8TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 1200V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 8A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 1.6002.2
sml1248pc2a.pdf
DUAL P-CHANNEL MOSFETS SML1248PC2A VDSS = -60V , ID = -100mA, RDS(ON) = 12 Device characterised to Max TJ =200C (See Note 1) Fast Switching Low Threshold Voltage Hermetic Ceramic Surface Mount Package ABSOLUTE MAXIMUM RATINGS(1) (TA = 25C unless otherwise stated) Each Side Total Device Each Side Total DeviceEach Side Total DeviceEach Side Tota
sml120j15.pdf
SML120J15SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml120j25.pdf
SML120J25SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml120b10.pdf
SML120B10TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 1200V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 10A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 1.50
sml1248nc2a.pdf
DUAL N-CHANNEL MOSFETS SML1248NC2A VDSS = 60V , ID = 160mA, RDS(ON) = 4 Device characterised to Max TJ =200C (See Note 1) Fast Switching Low Threshold Voltage Hermetic Ceramic Surface Mount Package ABSOLUTE MAXIMUM RATINGS(1) (TA = 25C unless otherwise stated) Each Side Total Device Each Side Total DeviceEach Side Total DeviceEach Side Total D
Другие транзисторы... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: 2SC2481
History: 2SC2481
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050