DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST4401NPN switching transistor1999 Apr 22Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor PMST4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Gen

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D187PMST4401NPN switching transistorProduct data sheet 1999 Apr 22Supersedes data of 1997 May 07 NXP Semiconductors Product data sheetNPN switching transistor PMST4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector General p

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D187PMST4403PNP switching transistor1999 Apr 22Product specificationSupersedes data of 1997 May 29Philips Semiconductors Product specificationPNP switching transistor PMST4403FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Swit

ST4460FXHigh voltage fast-switchingNPN Power transistorGeneral features High voltage and high current capability Low spread of dynamic parameters Low base-drive requirements Very high switching speed3 High ruggedness21 Fully insulated power package U.L. compliantISOWATT218FXApplications Switch mode power supplies for CRT TVDescriptionIntern

KST44033Switching Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -5 VIC Collector Current -600 mAPC Collector Power Dissipation 350 mWTSTG Storage Temper

KST44013Switching Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Dissipation 350 mWTSTG Storage Temperature 150

PMST440340 V, 600 mA PNP switching transistor1 August 2016 Product data sheet1. General descriptionPNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PMST44012. Features and benefits General purpose switching transistor AEC-Q101 qualified3. Applications Switching and linear amplification.4. Quick r

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

UMT4401 / SST4401 / MMST4401 / 2N4401TransistorsNPN Medium Power Transistor(Switching)UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units : mm) Features2.00.2UMT44011.30.1 0.90.11) BVCEO>40V (IC=1mA)0.65 0.65 0.2 0.70.1(1) (2)2) Complements the UMT4403 / SST4403 / MMST44030~0.1/ PN4403.(3)(1) Emitter(2) Base0.3+0.1 0.150.05ROHM : UM

SST4401 / UMT4401U3DatasheetNPN Medium Power Transistor(Switching)lOutlinelParameter Value SOT-23 SOT-323VCEO40VIC600mA SST4401 UMT4401U3(SST3) (UMT3)lFeaturesl1)BVCEO=40V(Min.) ; at IC=1mAlInner circuitl2)Complements the SST4403/UMT4403U3.lApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIERlPackaging specificationslBasicPackag

Transistors UMT4403 / SST4403 / MMST4403 / 2N4403(SPEC-A31)602Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon act

SST4401 / MMST4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 Features Dimensions (Unit : mm) 1) BVCEO>40V (IC=1mA) SST44012) Complements the SST4403 / MMST4403. Package, marking, and packaging specifications (1) Emitter(2) BasePart No. SST4401 MMST4401ROHM : SST3 (3) CollectorPackaging type SST3 SMT3Marking R2X R2XMMST4401Code T1

SST4403 / MMST4403 Transistors PNP Medium Power Transistor (Switching) SST4403 / MMST4403 Features Dimensions (Unit : mm) 1) BVCEO = -40V (Min.) ; at IC= -1mA SST44032) Complements the SST4401 / MMST4401 SOT-23(1) Emitter Package, marking, and packaging specifications (2) Base(3) CollectorROHM : SST3Part No. SST4403 MMST4403Packaging type SST3 SMT3MMST4403Mar

2N4416/2N4416A/SST4416Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N4416 -v6 -30 4.5 52N4416A -2.5 to -6 -35 4.5 5SST4416 -v6 -30 4.5 5FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer2N4416/A, Gps 13 dB (typ) @D Very High System Sensitiv

SST441Vishay SiliconixMonolithic N-Channel JFET DualPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) |VGS1 VGS2|Max (mV)1 to 6 25 4.5 1 20FEATURES BENEFITS APPLICATIONSD Monolithic Design D Tight Differential Match vs. Current D Wideband Differential AmpsD High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed,Accuracy Temp-Comp

MMST4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Type Available (MMST4401) Dim Min Max C Ultra-Small Surface Mount Package A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B CB 1.15 1.35 "Green" Device (Note 3 and 4) C 2.00 2.20 B EMechanical Data GD 0.65 Nominal C

MMST4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Type Available (MMST4403) Dim Min Max C Ultra-Small Surface Mount Package A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B CB 1.15 1.35 "Green" Device (Note 3 and 4) C 2.00 2.20 B EMechanical Data GD 0.65 Nominal C

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMST4403Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Power dissipation: 200mW (Tamb=25 )PNP Small Signal Collector current: -0.6A Marking : K3T Transistors Operating and Storage junctio

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMST4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Power dissipation: 200mW (Tamb=25 )NPN Small Signal Collector current: 0.6A Marking : K3X Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/RoHS Co

N-Channel JFETMonolithic DualLLCSST440 / SST441FEATURES DESCRIPTIONs High Gain . . . . . . . . . . . . . . . . . . . . . . . gf > 6 mS typical Calogics SST440 Series is a high speed N-ChannelG Low Leakage . . . . . . . . . . . . . . . . . . . . . . I

N-Channel JFETSLLCSST4416FEATURES DESCRIPTION High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >4.5 mS Calogics SST4416 is an N-Channel JFET housed in a High Frequency Operation . . . . . . . . . . . . . . . . >400 MHz surface mount SOT-23 plastic package. The device is well Low Noise suited for designs that require low noise at high freq

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsMMST4401 TRANSISTOR (NPN)SOT323 FEATURES Complementary to MMST4403 Small Surface Mount PackageMARKING: K3XMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage 60 V CBO3. COLLECTORV Collector-Emitter Vo

MMST4403TRANSISTOR(PNP)SOT323 FEATURES Complementary To MMST4401 Small Surface Mount Package MARKING:K3T MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO3. COLLECTOR V Collector-Emitter Voltage -40 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -600 mA C

MMST4401TRANSISTOR(NPN)SOT323 FEATURES Complementary to MMST4403 Small Surface Mount Package MARKING: K3X MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 60 V CBO3. COLLECTOR V Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CPC

SMD Type TransistorsPNP TransistorsMMST4403 (KMST4403) Features Collector Current Capability IC=-0.6A Collector Emitter Voltage VCEO=-40V Complementary to MMST44011.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage V

SMD Type TransistorsNPN TransistorsMMST4401 (KMST4401) Features Small Surface Mount Package Complementary to MMST44031.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Col

SMD Type TransistorsPNP TransistorsMMST4403 (KMST4403) Features Collector Current Capability IC=-0.6A Collector Emitter Voltage VCEO=-40V Complementary to MMST44011.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage V

SMD Type TransistorsNPN TransistorsMMST4401 (KMST4401) Features Small Surface Mount Package Complementary to MMST44031.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Col

JST440630V N-Channel MosfetSOP-8FEATURESRDS(ON) 12m @VGS=10VRDS(ON) 15m @VGS=4.5VAPPLICATIONSUPSDC-DC Power ConverterMARKING N-CHANNEL MOSFETMaximum ratings (TC=25 unless otherwise noted)Symbol Param Max. UnitsbolV Drain-Source Voltage 30 V DSSV Gate-Source Voltage 20 V GSST = 25 13 C I Continuous Drain Current A DT = 100 8 C

JST4435-30V P-Channel MosfetSOP-8FEATURESRDS(ON) 23m @VGS=-10VRDS(ON)34m @VGS=-4.5VAPPLICATIONSLoad SwitchPower ManagementMARKING P-CHANNEL MOSFETYYMM:Date Code(year&month)Absolute Maximum Ratings (T =25 unless otherwise specified)CSymbol Param Max. UnitsbolV Drain-Source Voltage -30 VDSSV Gate-Source Voltage 20 VGSST = 25 -10 AC I

RoHS RoHSCOMPLIANT COMPLIANTMMST4403 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking: K3T Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V -40Collector-Emitter Voltage VCEO V -40Emitter-Base Voltage VEBO V -5Collec

RoHS RoHSCOMPLIANT COMPLIANTMMST4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking: K3X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector-Emitter Voltage VCEO V 40 Emitter-Base Voltage VEBO V 6 Collec