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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST5401 PNP high-voltage transistor 1999 Apr 29 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification PNP high-voltage transistor PMST5401 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 150 V). 1 base 2 emitter APPLICATIONS 3 collector

KST5401 High Voltage Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 350 mW TSTG Storage T

2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5484 -0.3 to -3 -25 3 1 2N/SST5485 -0.5 to -4 -25 3.5 4 2N/SST5486 -2 to -6 -25 4 8 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mi

2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 SST5460 2N5461 SST5461 2N5462 SST5462 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 40 1 1 2N/SST5461 1 to 7.5 40 1.5 2 2N/SST5462 1.8 to 9 40 2 4 FEATURES BENEFITS APPLICATIONS D High Input Impedance D Low Signal Loss/System Error D Low-Current, Low-Voltage

SPICE MODEL MMST5401 MMST5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 Complementary NPN Type Available (MMST5551) A Dim Min Max Ideal for Medium Power Amplification and Switching C A 0.25 0.40 Ultra-Small Surface Mount Package B 1.15 1.35 B C Available in Lead Free/RoHS Compliant Version (Note 2) C 2.00 2.20 B E D 0

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMST5401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Power dissipation 200mW (Tamb=25 ) PNP Small Signal Collector current -0.2A Marking K4M Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/RoHS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5401 TRANSISTOR (PNP) SOT 323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter

MMST5401 TRANSISTOR(PNP) SOT 323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -150 V CEO V Emitter

SMD Type Transistors PNP Transistors MMST5401 (KMST5401) Features Small Surface Mount Package Ideal for Medium Power Amplificationand Switching Complementary to MMST5551 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -150 V Emitter - Base Vol

RoHS COMPLIANT MMST5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking K4M Maximum Rantings (Ta=25 ) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -150 Collector-Base Voltage VCBO