TIP132 - описание и поиск аналогов

TIP131/TIP132 TIP135/TIP137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP131, TIP132, TIP135 AND TIP137 ARE SGS-THOMSON PREFERRED SALESTYPES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The TIP131 and TIP132 are silicon epitaxial-base TO-220 NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic p

TIP130/131/132 TIP135/136/137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n TIP131, TIP132, TIP135 AND TIP137 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching appl

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP132 DESCRIPTION High DC Current Gain- hFE = 1000(Min)@ IC= 4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min) Low Collector-Emitter Saturation Voltage- VCE(sat) = 2.0V(Max)@ IC= 4A Complement to Type TIP137 APPLICATIONS Designed for general-purpose

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP130 TIP135 TIP131 TIP136 TIP132 TIP137 NPN PNP TO-220 Plastic Package Intended for use in Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL TIP130/135 TIP131/136 TIP132/137 UNIT VCEO Collector Emitter Voltage 60 80 100 V Col

isc Silicon NPN Darlington Power Transistor TIP130 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 4A CE(sat) C Complement to Type TIP135 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

isc Silicon PNP Darlington Power Transistor TIP135 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -4A CE(sat) C Complement to Type TIP130 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

isc Silicon PNP Darlington Power Transistor TIP137 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -4A CE(sat) C Complement to Type TIP132 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

isc Silicon NPN Darlington Power Transistor TIP131 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 4A CE(sat) C Complement to Type TIP136 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

isc Silicon PNP Darlington Power Transistor TIP136 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -4A CE(sat) C Complement to Type TIP131 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT