Биполярный транзистор TIP141T - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TIP141T
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 500
Корпус транзистора: TO220
TIP141T Datasheet (PDF)
tip141t.pdf
isc Silicon NPN Darlington Power Transistor TIP141TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching application
tip140 tip141 tip142 tip145 tip146 tip147.pdf
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 3APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-218DESCRIPTION The TIP140, TIP141
tip140 tip141 tip142 tip145 tip146 tip147 .pdf
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESTMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 32APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-218DESCRIPTION The TI
tip141.pdf
TIP141/142TIP146/147COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP141and TIP142 are silicon epitaxial-baseNPN power transistors in monolithic Darlingtonconfiguration and are mounted in TO-218 plasticpackage. They are intented for use in powerlinear and switching applications.3The complementary PNP types are TIP146 an
tip141f.pdf
isc Silicon NPN Darlington Power Transistor TIP141FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica
tip141.pdf
isc Silicon NPN Darlington Power Transistor TIP141DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applicati
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050