TIP142F - описание и поиск аналогов

TIP140F/141F/142F Monolithic Construction With Built In Base- Emitter Shunt Resistors Complement to TIP145F/146F/147F High DC Current Gain hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Uni

isc Silicon NPN Darlington Power Transistor TIP142F DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applic

TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN APPLICATIONS 3 2 GENERAL PURPOSE SWITCHING 1 DESCRIPTION TO-220 The TIP142T is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration, mo

TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-218 DESCRIPTION The TI

TIP140T/141T/142T Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Val

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN TIP147T PNP TO-220 Plastic Package For use in Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP142/TIP147 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

TIP142T(3DA142T) NPN /SILICON NPN TRANSISTOR Purpose Linear and switching industrial equipment. - TIP147T(3CA147T) Features Monolithic construction with built in base-emitter shunt resistors High DC current gain complement to TIP147T(

SPTECH Product Specification SPTECH Silicon NPN Darlington Power Transistor TIP142T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147T APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

isc Silicon NPN Darlington Power Transistor TIP142T DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP147T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applicatio

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP142 DESCRIPTION High DC Current Gain- hFE = 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min) Complement to Type TIP147 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS