Справочник транзисторов. TIP145T

 

Биполярный транзистор TIP145T - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: TIP145T
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 80 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 500
   Корпус транзистора: TO220

 Аналоги (замена) для TIP145T

 

 

TIP145T Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
tip145t.pdf

TIP145T
TIP145T

isc Silicon PNP Darlington Power Transistor TIP145TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type TIP140TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching appli

 8.1. Size:68K  st
tip140 tip141 tip142 tip145 tip146 tip147.pdf

TIP145T
TIP145T

TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 3APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-218DESCRIPTION The TIP140, TIP141

 8.2. Size:48K  st
tip140 tip141 tip142 tip145 tip146 tip147 .pdf

TIP145T
TIP145T

TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESTMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 32APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-218DESCRIPTION The TI

 8.3. Size:59K  samsung
tip145f.pdf

TIP145T
TIP145T

PNP EPITAXIALTIP145F/146F/147F DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-3PFMIN h = 1000 @ V = -4V, IC = -5AFE CEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplement to TIP140F/141F/142FABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage VCBOV: TIP145F - 60V: TIP146F - 80V: TIP147F -

 8.4. Size:222K  inchange semiconductor
tip145.pdf

TIP145T
TIP145T

isc Silicon PNP Darlington Power Transistor TIP145DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type TIP140Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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