TIP145F/146F/147FMonolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) Industrial Use Complement to TIP140F/141F/142FTO-3PF11.Base 2.Collector 3.EmitterPNP Epitaxial Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value

TIP142TTIP147TCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAINAPPLICATIONS 32 GENERAL PURPOSE SWITCHING 1DESCRIPTION TO-220The TIP142T is a silicon epitaxial-base NPNpower transistor in monolithic Darlingtonconfiguration, mo

TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESTMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 32APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-218DESCRIPTION The TI

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPNTIP145, 146, 147 PNPTO- 3PN Non IsolatedPlastic PackageDesigned for General Purpose Amplifier and Low Frequency Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNITTIP145 TIP146 TIP147C

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RTIP142/TIP147 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

isc Silicon PNP Darlington Power Transistor TIP147DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type TIP142Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applic