TIP29 datasheet, аналоги, основные параметры
Наименование производителя: TIP29
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO220
Аналоги (замена) для TIP29
- подборⓘ биполярного транзистора по параметрам
TIP29 даташит
..1. Size:49K samsung
tip29.pdf 
TIP29 SERIES (TIP29/29A/29B/29C) NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complementary to TIP30/30A/30B/30C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage VCBO 40 V TIP29 60 V TIP29A TIP29B 80 V TIP29C 100 V TIP29 Collector Emitter Voltage VCEO 40 V TIP29A 60 V TIP29B TI
..2. Size:105K onsemi
tip29 tip29a tip29b tip29c tip30 tip30a tip30b tip30c.pdf 
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 package. www.onsemi.com Features 1 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS COMPLEMENTARY SILICON Rating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col
..4. Size:311K cdil
tip29 tip30 a b c.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25
..5. Size:209K inchange semiconductor
tip29.pdf 
isc Silicon NPN Power Transistors TIP29 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching appli
0.2. Size:87K st
tip2955 tip3055.pdf 
TIP2955 TIP3055 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal sche
0.3. Size:230K st
tip29a tip29c.pdf 
TIP29A TIP29C NPN power transistors . Features NPN transistors Applications Audio, linear and switching applications 3 Description 2 1 The devices are manufactured in Planar TO-220 technology with Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation Figure 1. Internal schematic diagram voltage.
0.4. Size:51K st
tip29a-tip29c tip30a-tip30c.pdf 
TIP29A/29C TIP30A/30C COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP29A and TIP29C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching 3 2 applications. 1 The complementary PNP types ar
0.5. Size:66K st
tip29a-30.pdf 
TIP29A/29B/29C TIP30A/30B/30C COMPLEMENTARY SILICON POWER TRANSISTORS TIP31A, TIP31C, TIP32A AND TIP32C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP31A, TIP31B and TIP31C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are TIP32A, 1
0.6. Size:526K fairchild semi
tip29-a-b-c.pdf 
July 2008 TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features Complementary to TIP30/TIP30A/TIP30B/TIP30C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage TIP29 40 V TIP29A 60 V TIP29B 80 V TIP29C 100 V VCEO Collector-Emitter Voltage TIP29 40 V TIP
0.7. Size:247K mcc
tip29-a-b-c tip30-a-b-c to-220.pdf 
MCC Micro Commercial Components TM TIP29,A,B,C(NPN) 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 TIP30,A,B,C(PNP) Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates 1.0 Amp RoHS Compliant. See ordering information) Complementary Marking Type Number Rth(jc) is 4.167OC/W, Rth(ja) i
0.8. Size:83K onsemi
tip29-a-b-c tip30-a-b-c.pdf 
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. http //onsemi.com Features 1 AMPERE Pb-Free Packages are Available* POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS, 80 WATTS MARKING DIAGRAM 4 TO-220AB TIPxxxG CASE 2
0.9. Size:268K onsemi
tip29g tip29ag tip29bg tip29cg tip30g tip30ag tip30bg tip30cg.pdf 
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 package. www.onsemi.com Features 1 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS COMPLEMENTARY SILICON Rating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col
0.10. Size:237K onsemi
tip3055 tip2955.pdf 
TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http //onsemi.com Features DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell
0.11. Size:81K bourns
tip2955.pdf 
TIP2955 PNP SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP3055 Series 90 W at 25 C Case Temperature B 1 15 A Continuous Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25 C case temperature (unless otherwi
0.13. Size:290K cdil
tip2955f tip3055f.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-
0.14. Size:959K jsmsemi
tip2955.pdf 
TIP2955 Silicon PNP Power Transistors DESCRIPTION With TO-247 package Complement to type TIP3055 90 W at 25 C case temperature 15 A continuous collector current APPLICATIONS Designed for general purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol
0.15. Size:209K inchange semiconductor
tip29c.pdf 
isc Silicon NPN Power Transistors TIP29C DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching ap
0.16. Size:209K inchange semiconductor
tip29a.pdf 
isc Silicon NPN Power Transistors TIP29A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching app
0.17. Size:217K inchange semiconductor
tip2955t.pdf 
isc Silicon PNP Power Transistor TIP2955T DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 4A CE(sat C Complement to Type TIP2955T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier
0.18. Size:209K inchange semiconductor
tip29b.pdf 
isc Silicon NPN Power Transistors TIP29B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching app
0.19. Size:221K inchange semiconductor
tip2955.pdf 
isc Silicon PNP Power Transistor TIP2955 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = -4A FE C Collector-Emitter Saturation Voltage- V )= -1.1 V(Max)@ I = -4A CE(sat C Complement to Type TIP3055 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifi
Другие транзисторы: TIP147F, TIP147T, TIP150, TIP151, TIP152, TIP160, TIP161, TIP162, 2SD1047, TIP2955, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F, TIP30
