TIP2955 - описание и поиск аналогов

TIP2955 TIP3055 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal sche

TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http //onsemi.com Features DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell

TIP2955 PNP SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP3055 Series 90 W at 25 C Case Temperature B 1 15 A Continuous Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25 C case temperature (unless otherwi

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TIP2955 Silicon PNP Power Transistors DESCRIPTION With TO-247 package Complement to type TIP3055 90 W at 25 C case temperature 15 A continuous collector current APPLICATIONS Designed for general purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol

isc Silicon PNP Power Transistor TIP2955 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = -4A FE C Collector-Emitter Saturation Voltage- V )= -1.1 V(Max)@ I = -4A CE(sat C Complement to Type TIP3055 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifi

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-

isc Silicon PNP Power Transistor TIP2955T DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 4A CE(sat C Complement to Type TIP2955T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier

TIP29A TIP29C NPN power transistors . Features NPN transistors Applications Audio, linear and switching applications 3 Description 2 1 The devices are manufactured in Planar TO-220 technology with Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation Figure 1. Internal schematic diagram voltage.

TIP29A/29C TIP30A/30C COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP29A and TIP29C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching 3 2 applications. 1 The complementary PNP types ar

TIP29A/29B/29C TIP30A/30B/30C COMPLEMENTARY SILICON POWER TRANSISTORS TIP31A, TIP31C, TIP32A AND TIP32C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP31A, TIP31B and TIP31C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are TIP32A, 1

July 2008 TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features Complementary to TIP30/TIP30A/TIP30B/TIP30C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage TIP29 40 V TIP29A 60 V TIP29B 80 V TIP29C 100 V VCEO Collector-Emitter Voltage TIP29 40 V TIP

TIP29 SERIES (TIP29/29A/29B/29C) NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complementary to TIP30/30A/30B/30C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage VCBO 40 V TIP29 60 V TIP29A TIP29B 80 V TIP29C 100 V TIP29 Collector Emitter Voltage VCEO 40 V TIP29A 60 V TIP29B TI

MCC Micro Commercial Components TM TIP29,A,B,C(NPN) 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 TIP30,A,B,C(PNP) Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates 1.0 Amp RoHS Compliant. See ordering information) Complementary Marking Type Number Rth(jc) is 4.167OC/W, Rth(ja) i

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. http //onsemi.com Features 1 AMPERE Pb-Free Packages are Available* POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS, 80 WATTS MARKING DIAGRAM 4 TO-220AB TIPxxxG CASE 2

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 package. www.onsemi.com Features 1 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS COMPLEMENTARY SILICON Rating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 package. www.onsemi.com Features 1 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS COMPLEMENTARY SILICON Rating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25

isc Silicon NPN Power Transistors TIP29C DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching ap

isc Silicon NPN Power Transistors TIP29 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching appli

isc Silicon NPN Power Transistors TIP29A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching app

isc Silicon NPN Power Transistors TIP29B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching app