TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col

isc Silicon NPN Power Transistors TIP29BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 0.7V(Max.)@I = 1.0ACE(sat) CComplement to Type TIP30BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapp

Order this documentMOTOROLAby TIP29B/DSEMICONDUCTOR TECHNICAL DATANPNTIP29BComplementary Silicon PlasticTIP29CPower TransistorsPNP. . . designed for use in general purpose amplifier and switching applications.TIP30BCompact TO220 AB package.

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col

TIP2955TIP3055Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal sche

TIP29ATIP29CNPN power transistors.Features NPN transistorsApplications Audio, linear and switching applications3Description21The devices are manufactured in Planar TO-220technology with Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation Figure 1. Internal schematic diagramvoltage.

TIP29A/29CTIP30A/30CCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP29A and TIP29C are siliconEpitaxial-Base NPN power transistors mounted inJedec TO-220 plastic package. They are intentedfor use in medium power linear and switching32applications.1The complementary PNP types ar

TIP29A/29B/29CTIP30A/30B/30CCOMPLEMENTARY SILICON POWER TRANSISTORS TIP31A, TIP31C, TIP32A AND TIP32C ARESGS-THOMSON PREFERREDSALESTYPES DESCRIPTION The TIP31A, TIP31B and TIP31C are siliconepitaxial-base NPN power transistors in JedecTO-220 plastic package, intented for use inmedium power linear and switching applications.32The complementary PNP types are TIP32A,1

July 2008TIP29/TIP29A/TIP29B/TIP29CNPN Epitaxial Silicon TransistorFeatures Complementary to TIP30/TIP30A/TIP30B/TIP30C1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP29 40 V : TIP29A 60 V : TIP29B 80 V : TIP29C 100 V VCEO Collector-Emitter Voltage : TIP29 40 V : TIP

TIP29 SERIES(TIP29/29A/29B/29C) NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEARTO-220SWITCHING APPLICATIONS Complementary to TIP30/30A/30B/30CABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage VCBO 40 V: TIP29 60 V: TIP29A: TIP29B 80 V: TIP29C 100 V: TIP29 Collector Emitter Voltage VCEO 40 V: TIP29A 60 V: TIP29B: TI

MCCMicro Commercial ComponentsTM TIP29,A,B,C(NPN)20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311TIP30,A,B,C(PNP)Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates 1.0 AmpRoHS Compliant. See ordering information) Complementary Marking: Type Number Rth(jc) is 4.167OC/W, Rth(ja) i

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 AB package.http://onsemi.comFeatures1 AMPERE Pb-Free Packages are Available*POWER TRANSISTORSCOMPLEMENTARY SILICON40, 60, 80, 100 VOLTS, 80 WATTSMARKINGDIAGRAM4TO-220ABTIPxxxGCASE 2

TIP3055 (NPN),TIP2955 (PNP)Complementary SiliconPower TransistorsDesigned for general-purpose switching and amplifier applications.http://onsemi.comFeatures DC Current Gain - 15 AMPEREhFE = 20 - 70 @ IC POWER TRANSISTORS= 4.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTSVCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell

TIP2955PNP SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)TIP3055 Series 90 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwi

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP29, A, B, C NPNTIP30, A, B, C PNPTO-220Plastic PackageComplementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi AmplifiersABSOLUTE MAXIMUM RATINGS (Ta=25

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP2955F PNPTIP3055F NPNTO- 3P Fully IsolatedPlastic PackageBCEDesigned for General Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector-Emitter Voltage VCEO 60 VCollector-Emitter Voltage VCER 70 VCollector-

TIP2955Silicon PNP Power TransistorsDESCRIPTION With TO-247 package Complement to type TIP3055 90 W at 25C case temperature 15 A continuous collector current APPLICATIONS Designed for generalpurpose switching and amplifier applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol

isc Silicon NPN Power Transistors TIP29CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 0.7V(Max.)@I = 1.0ACE(sat) CComplement to Type TIP30CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingap

isc Silicon NPN Power Transistors TIP29DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 0.7V(Max.)@I = 1.0ACE(sat) CComplement to Type TIP30Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingappli

isc Silicon NPN Power Transistors TIP29ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 0.7V(Max.)@I = 1.0ACE(sat) CComplement to Type TIP30AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapp

isc Silicon PNP Power Transistor TIP2955TDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 4ACE(sat CComplement to Type TIP2955TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifier

isc Silicon PNP Power Transistor TIP2955DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to Type TIP3055Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifi