INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32E DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1A Collector-Emitter Breakdown Voltage- : V(BR) CEO= -140V(Min) Complement to Type TIP31E APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMET

TIP32APower transistor .Applications Linear and swithing industrial equipmentDescriptionThe TIP32A is a silicon Epitaxial-base PNP power 32transistor in Jedec TO-220 plastic package. It is 1intented for use in medium power linear and switching applications.TO-220The complementary NPN type is TIP31A.Internal schematic diagramOrder codesPart number Marking Packa

TIP32CPower transistor .Applications Linear and swithing industrial equipmentDescriptionThe TIP32C is a silicon Epitaxial-base PNP power 32transistor in Jedec TO-220 plastic package. It is 1intented for use in medium power linear and switching applications.TO-220The complementary NPN type is TIP31C.Internal schematic diagramOrder codesPart number Marking Packa

TIP31A/31CTIP32A/32B/32C COMPLEMENTARY SILICON POWERTRANSISTORSAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe TIP31A and TIP31C are siliconEpitaxial-Base NPN transistors mounted inJedec TO-220 plastic package. They are intented3for use in medium power linear and switching 21applications.The complementary PNP types are TIP32A andTO-220TI

July 2008TIP32/TIP32A/TIP32B/TIP32CPNP Epitaxial Silicon TransistorFeatures Complementary to TIP31/TIP31A/TIP31B/TIP31C1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP32 - 40 V : TIP32A - 60 V : TIP32B - 80 V : TIP32C - 100 V VCEO Collector-Emitter Voltage : TIP32 - 40

TIP32 Series(TIP32/32A/32B/32C)Medium Power Linear Switching Applications Complement to TIP31/31A/31B/31CTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP32 - 40 V : TIP32A - 60 V : TIP32B - 80 V : TIP32C - 100 V VCEO Collector-Emit

TIP32 Series(TIP32/32A/32B/32C)Medium Power Linear Switching Applications Complement to TIP31/31A/31B/31CTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP32 - 40 V : TIP32A - 60 V : TIP32B - 80 V : TIP32C - 100 V VCEO Collector-Emit

TIP32 SERIES(TIP32/32A/32B/32C) PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEARTO-220SWITCHING APPLICATIONS Complement to TIP31/31A/31B/31CABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage : TIP32 VCBO -40 V : TIP32A -60 V : TIP32B -80 V : TIP32C -100 V Collector Emitter Voltage : TIP32 VCEO -40 V : TIP32A -60 V : TIP32B -80 V

MCCTMMicro Commercial ComponentsTIP32/A/B/C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features TO-220 packageSilicon PNP The complementary NPN types are the TIP31 respectively Case Material: Molded Plastic. ULFlammabilityPower TransistorsClassification Rating 94V-0Marking : Part Number

MCCTMMicro Commercial ComponentsTIP32/32A/32B/32C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon PNP The complementary NPN types are the TIP31 respectively Epoxy meets UL 94 V-0

November 2014TIP32 / TIP32A / TIP32CPNP Epitaxial Silicon TransistorFeatures Medium Power Linear Switching Applications Complementary to TIP31 SeriesTO-22011.Base 2.Collector 3.EmitterOrdering InformationPart Number Top Mark Package Packing MethodTIP32 TIP32 TO-220 3L (Single Gauge) BulkTIP32A TIP32A TO-220 3L (Single Gauge) BulkTIP32ATU TIP32A TO-220 3L (Single

TIP31, TIP31A, TIP31B,TIP31C, (NPN), TIP32,TIP32A, TIP32B, TIP32C,(PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorsDesigned for use in general purpose amplifier and switching3 AMPEREapplications.POWER TRANSISTORSFeatures Collector-Emitter Saturation Voltage - COMPLEMENTARY SILICONVCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc40-60-80-100 VOLTS, Co

TIP31G, TIP31AG, TIP31BG,TIP31CG (NPN),TIP32G, TIP32AG, TIP32BG,TIP32CG (PNP)Complementary Siliconwww.onsemi.comPlastic Power Transistors3 AMPEREDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSCOMPLEMENTARY SILICONFeatures40-60-80-100 VOLTS, High Current Gain - Bandwidth Product40 WATTS Compact TO-220 Package Th

UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP31C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

TIP32 / TIP32C PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-220J Medium Power Linear Switching Applications CollectorBaseEmitterABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise specified) Ratings Parameter Symbol Unit TIP32 TIP32C

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP31, A, B, C NPNTIP32, A, B, C PNPTO-220Plastic PackageComplementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi AmplifiersABSOLUTE MAXIMUM RATINGS (Ta=25

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L TIP32/32A/32B/32C TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Medium Power Linear Switching Applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP32 TIP32A TIP32B TIP32C UnitVCBO Collector-Base Voltage -40 -60 -80 -100 V

SEMICONDUCTOR TIP32CFTECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSS_Complementary to TIP31CF. A 10.0 + 0.3_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +MAXIMUM RATING (Ta=25 ) 0.5+0.1/-0.05H_+J 13.6 0.5L LRK _3.7 0.2CHARACTERISTIC SYMBOL RA

SEMICONDUCTOR TIP32CTECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORGENERAL PURPOSE APPLICATION.ARFEATURES S Complementary to TIP31C.PDDIM MILLIMETERSA 10.30 MAXB 15.30 MAXC 0.80MAXIMUM RATING (Ta=25 ) _+D 3.60 0.20TE 3.00CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX_G 13.60 + 0.50LH 5.60 MAXVCBO -100 VCollector-Base VoltageC CJ 1.37 MAXK 0.5

TIP32/32A/32B/32C TO-220 Transistor (PNP)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Medium Power Linear Switching Applications Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP32 TIP32A TIP32B TIP32C Units VCBO Collector-Base Voltage -40 -60 -80 -100 V VCEO Collector-Emitter Voltage -40 -60 -80

PNP PNP Epitaxial Silicon Transistor RTIP32C APPLICATIONS Medium Power Linear Switching Applications FEATURES High collector voltageV =-100V (min) V =-100V (min) CEO CEO Complementary to TIP31C TIP31C RoHS product

ST TIP32C PNP Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit100 VCollector Base Voltage -VCBO 100 VCollector Emitter Voltage -VCEO 5 VEmitter Base Voltage -VEBO 3 ACollector Current -IC 5 ACollector Current (Pulse) -ICP 1 ABase Current -

SEMICONDUCTORTIP32TECHNICAL DATA TRANSISTOR (PNP) TIP32/32A/32B/32CAOCFE FEATURESBDIM MILLIMETERSMedium Power Linear Switching Applications A 10.15 0.15 B 15.30 MAXC 1.3+0.1/-0.15PD 0.8 0.1E 3.8 0.2MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 2.7 0.2JH 0.4 0.15DJ 13.6 0.2N 2.54 0.2HN NSymbol Parameter TIP32 T

TIP32 seriesDESCRIPTIONWith TO-220 package Complement to type TIP31/31A/31B/31C APPLICATIONS PIN1Base Medium power linear and switching PIN 2Collector 1 2 applications 3 PIN 3Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITTIP32 -40TIP32A -60VCBO Collector-base voltage Open emitter V TIP32B -80TIP32C -100 TIP3

TIP32CSilicon PNP Epitaxial TransistorTIP32CTIP32C, the base island technology PNP power transistor, make thisdevice suitable for audio,power linear and switching applications.Thecomplementary NPN type is TIP31CFeatures Complementary PNP-NPN devices h groupingFE h improved linearityFE RoHS productApplications General purpose circuits Audio amplifi

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32F DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1A Collector-Emitter Breakdown Voltage- : V(BR) CEO= -160V(Min) Complement to Type TIP31F APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMET

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP32/32A/32B/32C DESCRIPTION With TO-220C package Complement to type TIP31/31A/31B/31C APPLICATIONS Medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32D DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1A Collector-Emitter Breakdown Voltage- : V(BR) CEO= -120V(Min) Complement to Type TIP31D APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMET