TIP33 datasheet, аналоги, основные параметры
Наименование производителя: TIP33
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO218
Аналоги (замена) для TIP33
- подборⓘ биполярного транзистора по параметрам
TIP33 даташит
..1. Size:38K st
tip33.pdf 
TIP33C TIP34C COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP33C is a silicon epitaxial-base NPN power transistors in TO-218 plastic package, intented for use in linear and switching applications. The complementary PNP types is TIP34C. 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN
..3. Size:281K cdil
tip33 tip34f.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS TIP33F, 33AF, 33BF, 33CF TIP 34F,34AF, 34BF, 34CF TO -3P Plastic Package B C E Complementary TIP34F, 34AF, 34BF, 34CF General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise ) DESCRIPTION SYMBOL 33F 33AF 33
..4. Size:120K inchange semiconductor
tip33 tip33a tip33b tip33c.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP33/33A/33B/33C DESCRIPTION With TO-3PN package Complement to type TIP34/34A/34B/34C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base
..5. Size:219K inchange semiconductor
tip33.pdf 
isc Silicon NPN Power Transistor TIP33 DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Complement to Type TIP34 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM
0.1. Size:105K motorola
tip33bre.pdf 
Order this document MOTOROLA by TIP33B/D SEMICONDUCTOR TECHNICAL DATA NPN * TIP33B Complementary Silicon TIP33C PNP High-Power Transistors TIP34B* . . . for general purpose power amplifier and switching applications. 10 A Collector Current Low Leakage Current ICEO = 0.7 mA @ 60 V TIP34C Excellent dc Gain hFE = 40 Typ @ 3.0 A
0.2. Size:108K st
tip33c tip34c.pdf 
TIP33C TIP34C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Figure 1. Internal schematic diagrams Table 1.
0.3. Size:48K st
tip33c tip34c .pdf 
TIP33C TIP34C COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION 3 The TIP33C is a silicon Epitaxial-Base NPN 2 power transistor mounted in TO-218 plastic 1 package. It is intented for use in linear and switching applications. TO-218 The complementary PNP t
0.4. Size:51K onsemi
tip33a tip33c.pdf 
TIP33A, TIP33C NPN High-Power Transistors Designed for general-purpose power amplifier and switching applications. Features ESD Ratings Machine Model, C; > 400 V http //onsemi.com Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in 10 AMPERE Pb-Free Packages are Available* NPN SILICON POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM RATINGS Rating Symbol
0.5. Size:184K onsemi
tip33c.pdf 
DATA SHEET www.onsemi.com NPN High-Power Transistors TIP33C Designed for general-purpose power amplifier and switching applications. TO-247 CASE 340L Features STYLE 3 ESD Ratings Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 10 AMPERE Epoxy Meets UL 94 V-0 @ 0.125 in NPN SILICON These Devices is Pb-Free* POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM R
0.6. Size:84K bourns
tip33-a-b-c.pdf 
TIP33, TIP33A, TIP33B, TIP33C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP34 Series 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current C 2 15 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute max
0.7. Size:332K cdil
tip33p tip34.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH POWER TRANSISTORS TIP33, A, B, C NPN TIP34, A, B, C PNP TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP33 TIP33A TIP33B TIP33C DESCRIPTION SYMBOL UNIT TIP34 TIP34A TIP34B TIP34C Collector Emitter Voltage V
0.8. Size:313K kec
tip33c.pdf 
SEMICONDUCTOR TIP33C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Complementary to TIP34C. Recommended for 45W 50W Audio Frequency DIM MILLIMETERS A 15.9 MAX Amplifier Output Stage. B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d MAXIMUM RATING (Ta=25 ) H 9.0 I 4.5 CHARACTERISTIC SY
0.9. Size:219K inchange semiconductor
tip33c.pdf 
isc Silicon NPN Power Transistor TIP33C DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP34C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXI
0.10. Size:219K inchange semiconductor
tip33b.pdf 
isc Silicon NPN Power Transistor TIP33B DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP34B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM
0.11. Size:219K inchange semiconductor
tip33a.pdf 
isc Silicon NPN Power Transistor TIP33A DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP34A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM
Другие транзисторы: TIP31F, TIP32, TIP32A, TIP32B, TIP32C, TIP32D, TIP32E, TIP32F, S9013, TIP33A, TIP33B, TIP33C, TIP33D, TIP33E, TIP33F, TIP34, TIP34A
