Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP33/33A/33B/33C DESCRIPTION With TO-3PN package Complement to type TIP34/34A/34B/34C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

isc Silicon NPN Power Transistor TIP33BDESCRIPTIONDC Current Gain-: h = 40(Min)@I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP34BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIM

Order this documentMOTOROLAby TIP33B/DSEMICONDUCTOR TECHNICAL DATANPN*TIP33BComplementary SiliconTIP33CPNPHigh-Power TransistorsTIP34B*. . . for generalpurpose power amplifier and switching applications. 10 A Collector Current Low Leakage Current ICEO = 0.7 mA @ 60 V TIP34C Excellent dc Gain hFE = 40 Typ @ 3.0 A

TIP33CTIP34CCOMPLEMENTARY SILICON POWER TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP33C is a silicon epitaxial-base NPNpower transistors in TO-218 plastic package,intented for use in linear and switchingapplications.The complementary PNP types is TIP34C.321TO-218INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitNPN

TIP33CTIP34CComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Figure 1. Internal schematic diagramsTable 1.

TIP33CTIP34CCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION 3The TIP33C is a silicon Epitaxial-Base NPN2power transistor mounted in TO-218 plastic1package. It is intented for use in linear andswitching applications.TO-218The complementary PNP t

TIP33A, TIP33CNPN High-Power TransistorsDesigned for general-purpose power amplifier and switchingapplications.Features ESD Ratings: Machine Model, C; > 400 Vhttp://onsemi.comHuman Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in10 AMPERE Pb-Free Packages are Available*NPN SILICONPOWER TRANSISTORS60 & 100 VOLT, 80 WATTSMAXIMUM RATINGSRating Symbol

DATA SHEETwww.onsemi.comNPN High-Power TransistorsTIP33CDesigned for general-purpose power amplifier and switchingapplications. TO-247CASE 340LFeatures STYLE 3 ESD Ratings: Machine Model, C; > 400 VHuman Body Model, 3B; > 8000 V10 AMPERE Epoxy Meets UL 94 V-0 @ 0.125 inNPN SILICON These Devices is Pb-Free*POWER TRANSISTORS60 & 100 VOLT, 80 WATTSMAXIMUM R

TIP33, TIP33A, TIP33B, TIP33CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)TIP34 Series 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute max

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyHIGH POWER TRANSISTORS TIP33, A, B, C NPNTIP34, A, B, C PNPTO- 3PN Non IsolatedPlastic PackageFor General Purpose Power Amplifier and Switching Applications.ABSOLUTE MAXIMUM RATINGS TIP33 TIP33A TIP33B TIP33CDESCRIPTION SYMBOL UNIT TIP34 TIP34A TIP34B TIP34CCollector Emitter Voltage V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN POWER TRANSISTORS TIP33F, 33AF, 33BF, 33CFTIP 34F,34AF, 34BF, 34CFTO -3PPlastic PackageBCEComplementary TIP34F, 34AF, 34BF, 34CFGeneral Purpose Power Amplifier and Switching Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise )DESCRIPTION SYMBOL 33F 33AF 33

SEMICONDUCTOR TIP33CTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION. A Q BKFEATURES Complementary to TIP34C.Recommended for 45W 50W Audio Frequency DIM MILLIMETERSA 15.9 MAXAmplifier Output Stage.B 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0G 3.3 MAXdMAXIMUM RATING (Ta=25 )H 9.0I 4.5CHARACTERISTIC SY

isc Silicon NPN Power Transistor TIP33CDESCRIPTIONDC Current Gain-: h = 40(Min)@I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP34CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXI

isc Silicon NPN Power Transistor TIP33ADESCRIPTIONDC Current Gain-: h = 40(Min)@I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP34AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIM

isc Silicon NPN Power Transistor TIP33DESCRIPTIONDC Current Gain-: h = 40(Min)@I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Complement to Type TIP34Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM