TIP33C - описание и поиск аналогов

TIP33C TIP34C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Figure 1. Internal schematic diagrams Table 1.

TIP33C TIP34C COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION 3 The TIP33C is a silicon Epitaxial-Base NPN 2 power transistor mounted in TO-218 plastic 1 package. It is intented for use in linear and switching applications. TO-218 The complementary PNP t

TIP33A, TIP33C NPN High-Power Transistors Designed for general-purpose power amplifier and switching applications. Features ESD Ratings Machine Model, C; > 400 V http //onsemi.com Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in 10 AMPERE Pb-Free Packages are Available* NPN SILICON POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM RATINGS Rating Symbol

DATA SHEET www.onsemi.com NPN High-Power Transistors TIP33C Designed for general-purpose power amplifier and switching applications. TO-247 CASE 340L Features STYLE 3 ESD Ratings Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 10 AMPERE Epoxy Meets UL 94 V-0 @ 0.125 in NPN SILICON These Devices is Pb-Free* POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM R

SEMICONDUCTOR TIP33C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Complementary to TIP34C. Recommended for 45W 50W Audio Frequency DIM MILLIMETERS A 15.9 MAX Amplifier Output Stage. B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d MAXIMUM RATING (Ta=25 ) H 9.0 I 4.5 CHARACTERISTIC SY

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP33/33A/33B/33C DESCRIPTION With TO-3PN package Complement to type TIP34/34A/34B/34C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

isc Silicon NPN Power Transistor TIP33C DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP34C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXI

Order this document MOTOROLA by TIP33B/D SEMICONDUCTOR TECHNICAL DATA NPN * TIP33B Complementary Silicon TIP33C PNP High-Power Transistors TIP34B* . . . for general purpose power amplifier and switching applications. 10 A Collector Current Low Leakage Current ICEO = 0.7 mA @ 60 V TIP34C Excellent dc Gain hFE = 40 Typ @ 3.0 A

TIP33C TIP34C COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP33C is a silicon epitaxial-base NPN power transistors in TO-218 plastic package, intented for use in linear and switching applications. The complementary PNP types is TIP34C. 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN

TIP33, TIP33A, TIP33B, TIP33C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP34 Series 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current C 2 15 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute max

A A A

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH POWER TRANSISTORS TIP33, A, B, C NPN TIP34, A, B, C PNP TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP33 TIP33A TIP33B TIP33C DESCRIPTION SYMBOL UNIT TIP34 TIP34A TIP34B TIP34C Collector Emitter Voltage V

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS TIP33F, 33AF, 33BF, 33CF TIP 34F,34AF, 34BF, 34CF TO -3P Plastic Package B C E Complementary TIP34F, 34AF, 34BF, 34CF General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise ) DESCRIPTION SYMBOL 33F 33AF 33

isc Silicon NPN Power Transistor TIP33B DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP34B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM

isc Silicon NPN Power Transistor TIP33A DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP34A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM

isc Silicon NPN Power Transistor TIP33 DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Complement to Type TIP34 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM