Биполярный транзистор TIP34C - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TIP34C
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO218
TIP34C Datasheet (PDF)
tip33c tip34c.pdf
TIP33CTIP34CComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Figure 1. Internal schematic diagramsTable 1.
tip33c tip34c .pdf
TIP33CTIP34CCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION 3The TIP33C is a silicon Epitaxial-Base NPN2power transistor mounted in TO-218 plastic1package. It is intented for use in linear andswitching applications.TO-218The complementary PNP t
tip34c.pdf
SEMICONDUCTOR TIP34CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION. A Q BKFEATURES Complementary to TIP33C.Recommended for 45W 50W Audio Frequency DIM MILLIMETERSA 15.9 MAXAmplifier Output Stage.B 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0G 3.3 MAXdMAXIMUM RATING (Ta=25 )H 9.0I 4.5CHARACTERISTIC SY
tip34 tip34a tip34b tip34c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP34/34A/34B/34C DESCRIPTION With TO-3PN package Complement to type TIP33/33A/33B/33C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base
tip34-a-b-c.pdf
TIP34, TIP34A, TIP34B, TIP34CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGETIP33 Series (TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maxi
tip33p tip34.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyHIGH POWER TRANSISTORS TIP33, A, B, C NPNTIP34, A, B, C PNPTO- 3PN Non IsolatedPlastic PackageFor General Purpose Power Amplifier and Switching Applications.ABSOLUTE MAXIMUM RATINGS TIP33 TIP33A TIP33B TIP33CDESCRIPTION SYMBOL UNIT TIP34 TIP34A TIP34B TIP34CCollector Emitter Voltage V
tip33 tip34f.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN POWER TRANSISTORS TIP33F, 33AF, 33BF, 33CFTIP 34F,34AF, 34BF, 34CFTO -3PPlastic PackageBCEComplementary TIP34F, 34AF, 34BF, 34CFGeneral Purpose Power Amplifier and Switching Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise )DESCRIPTION SYMBOL 33F 33AF 33
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050