Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP35F, AF, BF, CF NPNTIP36F, AF, BF, CF PNPTO- 3PF Fully IsolatedPlastic PackageBCEFor General Purpose Power Amplifier and Switching Applications.ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CFDESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CFVCEO

isc Silicon NPN Power Transistor TIP35FDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 160V(Min)CEO(SUS)Complement to Type TIP36FCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gener

Order this documentMOTOROLAby TIP35A/DSEMICONDUCTOR TECHNICAL DATANPNTIP35AComplementary SiliconTIP35B*High-Power Transistors. . . for generalpurpose power amplifier and switching applications. TIP35C*PNP 25 A Collector Current Low Leakage Current ICEO = 1.0 mA @ 30 and 60 VTIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwi

Order this documentMOTOROLAby TIP35A/DSEMICONDUCTOR TECHNICAL DATANPNTIP35AComplementary SiliconTIP35B*High-Power Transistors. . . for generalpurpose power amplifier and switching applications.TIP35C* 25 A Collector CurrentPNP Low Leakage Current ICEO = 1.0 mA @ 30 and 60 VTIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandw

TIP35CPTIP36CPComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN-PNP transistorsApplications General purpose3 Audio amplifier 21TO-3PDescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excepti

TIP35CTIP36B/TIP36CCOMPLEMENTARY SILICON HIGH POWERTRANSISTORS STMicroelectronic PREFERREDSALESTYPESDESCRIPTION The TIP35C is a silicon Epitaxial-Base NPNtransistor mounted in TO-218 plastic package. Itis intented for use in power amplifier andswitching applications.3The complementary PNP type is TIP36C.2Also TIP36B is a PNP type. 1TO-218INTERNAL SCHEMATIC DI

TIP35A/35B/35CTIP36A/36B/36CCOMPLEMENTARY SILICON HIGH POWERTRANSISTORSn TIP35B, TIP35C, TIP36B, AND TIP36C ARESGS-THOMSON PREFERREDSALESTYPESDESCRIPTIONThe TIP35A, TIP35B and TIP35C are siliconepitaxial-base NPN transistors in TO-218 plastic3package. They are intented for use in power2amplifier and switching applications.1The complementary PNP types are TIP36A,T

TIP35CWTIP36CWComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show exc

TIP35CTIP36CComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excep

TIP35A, TIP35B, TIP35C(NPN); TIP36A, TIP36B,TIP36C (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comDesigned for general-purpose power amplifier and switchingapplications.25 AMPEREFeaturesCOMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTSICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM C (2)(1)BE (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea

TIP35, TIP35A, TIP35B, TIP35CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGETIP36 Series (TOP VIEW) 125 W at 25C Case TemperatureB1 25 A Continuous Collector CurrentC 2 40 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute max

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SEMICONDUCTOR TIP35CATECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.AQ BNFEATURESO KRecommended for 75W Audio Frequency DIM MILLIMETERSAmplifier Output Stage. _A +15.60 0.20_B4.80 + 0.20Complementary to TIP36CA._C 19.90 + 0.20_D 2.00 0.20+Icmax:25A. _d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20D_G 3.50 +

SEMICONDUCTOR TIP35CTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURESRecommended for 75W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to TIP36C.A 15.9 MAXB 4.8 MAXIcmax:25A. _C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0G 3.3 MAXdH 9.0MAXIMUM RATING (Ta=25 )I 4.5P PT J 2.0

NPN NPN Epitaxial Silicon Transistor RTIP35C APPLICATIONS Audio amplifier General purpose FEATURES V =100V (min) High collector voltageV =100V (min) CEO CEO Low collector-emitter saturation voltage TIP36C Complementa

TIP35CT4TLSilicon NPN Power TransistorDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor TIP35CDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications

isc Silicon NPN Power Transistor TIP35DDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Complement to Type TIP36DCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gener

isc Silicon NPN Power Transistor TIP35EDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 140V(Min)CEO(SUS)Complement to Type TIP36ECurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gener

isc Silicon NPN Power Transistor TIP35AFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION With TO-3PN package Complement to type TIP36/36A/36B/36C DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

isc Silicon NPN Power Transistor TIP35ABDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

isc Silicon NPN Power Transistor TIP35ATDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

isc Silicon NPN Power Transistor TIP35CDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gener

isc Silicon NPN Power Transistor TIP35CFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CFCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gen