TIP35CTIP36B/TIP36CCOMPLEMENTARY SILICON HIGH POWERTRANSISTORS STMicroelectronic PREFERREDSALESTYPESDESCRIPTION The TIP35C is a silicon Epitaxial-Base NPNtransistor mounted in TO-218 plastic package. Itis intented for use in power amplifier andswitching applications.3The complementary PNP type is TIP36C.2Also TIP36B is a PNP type. 1TO-218INTERNAL SCHEMATIC DI

TIP35A, TIP35B, TIP35C(NPN); TIP36A, TIP36B,TIP36C (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comDesigned for general-purpose power amplifier and switchingapplications.25 AMPEREFeaturesCOMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTSICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

isc Silicon PNP Power Transistor TIP36BDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type TIP35BCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gen

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION With TO-3PN package Complement to type TIP35/35A/35B/35C DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

TIP35CPTIP36CPComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN-PNP transistorsApplications General purpose3 Audio amplifier 21TO-3PDescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excepti

TIP35CWTIP36CWComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show exc

TIP35CTIP36CComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excep

UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C. INTERNAL SCHEMATIC DIAGRAM C (2)(1)BE (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea

TIP36, TIP36A, TIP36B, TIP36CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)TIP35 Series 125 W at 25C Case TemperatureB1 25 A Continuous Collector CurrentC 2 40 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute ma

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP35F, AF, BF, CF NPNTIP36F, AF, BF, CF PNPTO- 3PF Fully IsolatedPlastic PackageBCEFor General Purpose Power Amplifier and Switching Applications.ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CFDESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CFVCEO

SEMICONDUCTOR TIP36CTECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURESRecommended for 75W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to TIP35C.A 15.9 MAXB 4.8 MAXIcmax:-25A. _C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0G 3.3 MAXdH 9.0MAXIMUM RATING (Ta=25 )I 4.5P PT J 2.0

SEMICONDUCTOR TIP36CATECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION.AQ BNFEATURESO KRecommended for 75W Audio Frequency DIM MILLIMETERSAmplifier Output Stage. _A +15.60 0.20_B4.80 + 0.20Complementary to TIP35CA._C 19.90 + 0.20_D 2.00 0.20+Icmax:-25A. _d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20D_G 3.50

PNP PNP Epitaxial Silicon Transistor RTIP36C APPLICATIONS Audio amplifier General purpose FEATURES V =100V (min) High collector voltageV =100V (min) CEO CEO Low collector-emitter saturation voltage TIP35C Complementa

TIP36CT4TLSilicon PNP Power TransistorDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type TIP35CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor TIP36CDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type TIP35CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicati

isc Silicon PNP Power Transistor TIP36ABDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

isc Silicon PNP Power Transistor TIP36DDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)Complement to Type TIP35DCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ge

isc Silicon PNP Power Transistor TIP36CFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type TIP35CFCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in

isc Silicon PNP Power Transistor TIP36AFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

isc Silicon PNP Power Transistor TIP36EDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -140V(Min)CEO(SUS)Complement to Type TIP35ECurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ge

isc Silicon PNP Power Transistor TIP36ATDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

isc Silicon PNP Power Transistor TIP36ADESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type TIP35ACurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gen

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36F DESCRIPTIONDC Current Gain- : hFE= 25(Min)@IC = -1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -160V(Min) Complement to Type TIP35F Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS Designed for use in general purpose power amplifier and swi