TIP507 - Даташиты. Аналоги. Основные параметры

TIP47/TIP48 TIP49/TIP50 SILICON NPN SWITCHING TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The TIP47, TIP48, TIP49 and TIP50 are silicon Multiepitaxial NPN Planar transistors mounted in Jedec TO-220 plastic package. It is intented for use in linear and switching applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATIN

November 2008 TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor High Voltage and Switching Applications High Sustaining Voltage VCEO(sus) = 250 - 400V 1A Rated Collector Current TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage TIP47 350 V TIP48 400 V TIP4

TIP47G, TIP48G, TIP50G High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. www.onsemi.com Features Popular TO-220 Plastic Package 1.0 AMPERE Complementary to the MJE5730 and MJE5731 Series POWER TRANSISTORS These Devices are Pb-Free and are RoHS Comp

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS TIP47, TIP48 TIP49, TIP50 TO-220 Plastic Package Line Operated Audio Output Amplifier, Switch Mode Power Supply Driver and General Purpose Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL TIP47 TIP48 TIP49 TIP50 UNIT VCEO Collector Em

Spec. No. C827J3 Issued Date 2010.03.16 CYStech Electronics Corp. Revised Date 2013.12.19 Page No. 1/7 High Voltage NPN Power Transistor BVCEO 400V IC 1.5A TIP50J3 RCESAT 500m (max.) Features High breakdown voltage, V =400V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free lead plating and halogen-free package Symbol Outline TIP50J3

Spec. No. C827I3 Issued Date 2013.01.04 CYStech Electronics Corp. Revised Date Page No. 1/6 High Voltage NPN Power Transistor BVCEO 400V IC 1.5A TIP50I3 RCESAT 500m (max.) Features High breakdown voltage, V =400V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free lead plating package Symbol Outline TIP50I3 TO-251AB TO-251S B Base

SPTECH Product Specification SPTECH Silicon NPN Power Transistors TIP50 DESCRIPTION DC Current Gain -h = 30 150@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistors TIP50 DESCRIPTION DC Current Gain -h = 30 150@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE