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Product Specification www.jmnic.comSilicon NPN Power Transistors 2N5294 2N5296 2N5298 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5298 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0.15A Wide Area of Safe Operation APPLICATIONS Designed for medium power switching amplifier applications. ABSOLUTE MAXIMUM RATING

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5294 2N5296 2N5298 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N5294, 2N5296, 2N52982N5294, 5296, 5298 NPN PLASTIC POWER TRANSISTORSMedium Power Switching and Amplifier ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

isc Silicon NPN Power Transistor 2N5297DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 1.5A, I = 0.15ACE(sat) C BWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power