TN2905 datasheet и подбор замены

 9.1. Size:92K  fairchild semi
 tn2907a.pdf 

September 2007 TN2907A PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from process 63. 1 TO-226 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter V

 9.2. Size:205K  auk
 stn2907a.pdf 

STN2907A PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application Features Large collector current Low collector saturation voltage Complementary pair with STN2222A TO-92 Ordering Information Type NO. Marking Package Code STN2907A STN2907A TO-92 Absolute maximum ratings Ta=25 C Characteristic Sym

 9.3. Size:358K  auk
 stn2907as.pdf 

STN2907AS PNP Silicon Transistor Descriptions General purpose application Emitter 2 Switching application 3 Base Base 1 1 Features Large collector current Collector 1 Low collector saturation voltage 2 3 Complementary pair with STN2222AS SOT-23 Ordering Information Part Number Marking Package WA STN2907AS SOT-23

 9.4. Size:281K  auk
 stn2907sf.pdf 

STN2907SF PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current Low collector saturation voltage 2 SOT-23F Complementary pair with STN2222SF Ordering Information Type NO. Marking Package Code GA STN2907SF SOT-23F Device Code Year&Week

 9.5. Size:281K  auk
 stn2907asf.pdf 

STN2907ASF PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current Low collector saturation voltage 2 SOT-23F Complementary pair with STN2222ASF Ordering Information Type NO. Marking Package Code WA STN2907ASF SOT-23F Device Code Year&We

 9.6. Size:270K  auk
 stn2907s.pdf 

STN2907S PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application C Features B Large collector current IC=-600mA E Low collector saturation voltage VCE(sat)=-0.4V(Max.) @ IC=-150mA, IB=-15mA SOT-23 Complementary pair with STN2222S Ordering Information Type NO. Marking Package Code GA STN2907S

 9.7. Size:262K  auk
 stn2907aef.pdf 

STN2907AEF PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current 2 Low collector saturation voltage SOT-523F Ordering Information Type NO. Marking Package Code GT STN2907AEF SOT-523F Device Code Year&Week Code Absolute Maximum Ratings (Ta=25 C)

 9.8. Size:226K  auk
 stn2907.pdf 

STN2907 Semiconductor Semiconductor PNP Silicon Transistor Descriptions General purpose application Switching application Features Large collector current Low collector saturation voltage Complementary pair with STN2222 Ordering Information Type NO. Marking Package Code STN2907 STN2907 TO-92 Outline Dimensions unit mm 3.35 3.55 4.4 4.6

 9.9. Size:577K  kec
 ktn2907s as.pdf 

SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

 9.10. Size:379K  kec
 ktn2907 a.pdf 

SEMICONDUCTOR KTN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. N DIM MILLIMETERS Low Saturation Voltage A 4.70 MAX E K VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. B 4.80 MAX G C 3.70 MAX D Complementary to the KTN2222/2222A. D 0.45 E 1.00

 9.11. Size:704K  kec
 ktn2907s ktn2907as.pdf 

SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ Low Leakage Current A 2.93 0.20 + B 1.30+0.20/-0.15 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Saturation Voltage E 2.40+0.30/-0.20 1 VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15m

 9.12. Size:43K  kec
 ktn2907u au.pdf 

SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Leakage Current _ A + 2.00 0.20 D 2 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. _ + B 1.25 0.15 _ + C 0.90 0.10 Low Saturation Voltage 3 1 D 0.3+0.10/-0.05 _ E + VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15

 9.13. Size:83K  kec
 ktn2907ae.pdf 

SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current D DIM MILLIMETERS ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. 2 _ + A 1.60 0.10 Low Saturation Voltage _ + B 0.85 0.10 3 1 _ C 0.70 0.10 + VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. D 0.27+0.10/-0.05 _ Complementar

 9.14. Size:50K  kec
 ktn2907u ktn2907au.pdf 

SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Leakage Current _ + A 2.00 0.20 D 2 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. _ + B 1.25 0.15 _ + C 0.90 0.10 Low Saturation Voltage 3 1 D 0.3+0.10/-0.05 _ + VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

 9.15. Size:640K  semtech
 mmftn290e.pdf 

MMFTN290E N-Channel Enhancement Mode MOSFET Features Drain Very fast switching ESD protected up to 2 KV Gate Source Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Drain Current VGS = 4.5 V, TA = 25 700 1) ID mA 440 1) VGS = 4.5 V, TA = 100 Peak Drain Current (tp 10 s) IDM 2.8 A S