Биполярный транзистор TR03 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TR03
Тип материала: Ge
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 100 °C
Статический коэффициент передачи тока (hfe): 53
TR03 Datasheet (PDF)
rtr030p02fha.pdf
RTR030P02FHARTR030P2TransistorsAEC-Q101 Qualified2.5V Drive Pch MOS FET RTR030P02RTR030P02FHA External dimensions (Unit : mm) StructureSilicon P-channel TSMT31.0MAXMOS FET2.90.850.4 0.7(3) Features 1) Low On-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimen
rtr030n05.pdf
2.5V Drive Nch MOSFET RTR030N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PV (3) Drain Application I
rtr030n05fra.pdf
AEC-Q101 Qualified2.5V Drive Nch MOSFET RTR030N05 RTR030N05FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol :
rtr030p02.pdf
RTR030P02 Transistors 2.5V Drive Pch MOS FET RTR030P02 External dimensions (Unit : mm) Structure Silicon P-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low On-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : TV
rtr030n05tl.pdf
2.5V Drive Nch MOSFET RTR030N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PV (3) Drain Application I
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050