Биполярный транзистор UN2110R
Даташит. Аналоги
Наименование производителя: UN2110R
Маркировка: 6L
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 80
MHz
Статический коэффициент передачи тока (hfe): 210
Корпус транзистора:
SOT23
SC59
- подбор биполярного транзистора по параметрам
UN2110R
Datasheet (PDF)
9.1. Size:236K motorola
mun2111t1rev5.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN2111T1/DBias Resistor TransistorMUN2111T1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a singl
9.2. Size:188K motorola
mmun2111lt1rev0d.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMUN2111LT1/DBias Resistor TransistorMMUN2111LT1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a s
9.3. Size:267K motorola
mmun2111.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMUN2111LT1/DBias Resistor TransistorMMUN2111LT1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a s
9.4. Size:139K onsemi
mun2115.pdf 

MUN2115, MMUN2115L,MUN5115, DTA114TE,DTA114TM3, NSBA114TF3Digital Transistors (BRT)R1 = 10 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B
9.5. Size:134K onsemi
mun2116.pdf 

MUN2116, MMUN2116L,MUN5116, DTA143TE,DTA143TM3, NSBA143TF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
9.6. Size:111K onsemi
nsvmun2112t1g.pdf 

MUN2112, MMUN2112L,MUN5112, DTA124EE,DTA124EM3, NSBA124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
9.7. Size:119K onsemi
nsvmmun2113lt3g.pdf 

MUN2113, MMUN2113L,MUN5113, DTA144EE,DTA144EM3, NSBA144EF3Digital Transistors (BRT)R1 = 47 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT
9.9. Size:111K onsemi
nsvmmun2112lt1g.pdf 

MUN2112, MMUN2112L,MUN5112, DTA124EE,DTA124EM3, NSBA124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
9.10. Size:130K onsemi
mun2111t1 6a-lsot346.pdf 

MUN2111T1 SeriesPreferred DeviceBias Resistor TransistorPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkPIN 3consisting of tw
9.12. Size:190K onsemi
mmun2111lt1.pdf 

MMUN2111LT1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a serie
9.13. Size:111K onsemi
mun2111t1-d.pdf 

MUN2111T1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. TheBias Resistor Transistor (BRT) contains a single transistor with aPIN 3monolithic bias network consisting of
9.14. Size:199K wietron
mmun2111.pdf 

MMUN2111 SeriesBias Resistor TransistorCOLLECTOR33PNP Silicon R 11BASER 2122EMITTERSOT-23( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsMax UnitCharacteristics SymbolTotal Device Dissipa
9.16. Size:307K tysemi
kmun2114.pdf 

sSMD Type Transs iis ttoCsSMD Type Tran IorrSMD Type Tra n sistICSMD TypeSMD TypeSMD Type orProduct specificationKMUN211 4SOT-23Unit: mm Features+0.12.9-0.1+0.10.4-0.1 Simplifies Circuit Design3 Reduces Board Space Reduces Component Count1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1PIN 3R1 COLLECTORPIN 1(OUTPUT)BASE1.Base(
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History: 2SD882SQ-E
| DTC115EEB