UN2112 datasheet, аналоги, основные параметры
Наименование производителя: UN2112 📄📄
Маркировка: 6B
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 80 MHz
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Аналоги (замена) для UN2112
- подборⓘ биполярного транзистора по параметрам
UN2112 даташит
un2110q un2110r un2110s un2111 un2112 un2113 un2114 un2115q un2115r un2115s un2116q un2116r un2116s un2117q un2117r un2117s.pdf
Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit mm 0.40+0.10 0.05 For digital circuits 0.16+0.10 0.06 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 Mini type package allowing easy automatic insertion through tape (0.95) (0.95) packing and mag
nsvmun2112t1g.pdf
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
mmun2111lt1g mmun2111lt3g mmun2112lt1g mmun2113lt1g mmun2113lt3g mmun2114lt1g mmun2114lt3g mmun2115lt1g.pdf
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network SO
nsvmmun2112lt1g.pdf
MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
Другие транзисторы: UN1221, UN1222, UN1223, UN1224, UN2110Q, UN2110R, UN2110S, UN2111, BC547B, UN2113, UN2114, UN2115Q, UN2115R, UN2115S, UN2116Q, UN2116R, UN2116S
Параметры биполярного транзистора и их взаимосвязь
Список транзисторов
Обновления
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
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