ZT64 - описание и поиск аналогов

Discrete Power & Signal Technologies July 1998 FZT649 C E C B SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter FZT649 Units 25 V VCEO Collector-Emitter Voltage 35 V VCBO Collector-B

A Product Line of Diodes Incorporated Green FZT649 25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 25V Case SOT223 IC = 3A High Continuous Current Case Material Molded Plastic. Green Molding Compound; ICM = 8A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type Transistors NPN Transistors FZT649 (KZT649) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=25V 1 2 3 Low saturation voltage 0.250 2.30 (typ) Complementary to FZT749 Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta =

SMD Type Transistors NPN Transistors FZT649 (KZT649) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=25V 1 2 3 Low saturation voltage 0.250 2.30 (typ) Complementary to FZT749 Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta =