Биполярный транзистор ZT67 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: ZT67
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 75
Корпус транзистора: TO5
ZT67 Datasheet (PDF)
nzt6727.pdf
NZT6727PNP General Purpose Amplifier4 This device is designed for general purpose medium power amplifiers and switches requiring collecor currents to 1.0A. Sourced from process 77. 321SOT-2231. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -40 VVCBO Collector-Base
tn6717a nzt6717.pdf
TN6717A NZT6717CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.0 A.Sourced from Process 39.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 80 VVE
tn6714a nzt6714.pdf
TN6714A NZT6714CECBTO-226CSOT-223BENPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.5 A.Sourced from Process 37.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VV
nzt6715 tn6715a.pdf
TN6715A NZT6715CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.2 A.Sourced from Process 38.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 50 VVE
tn6728a nzt6728.pdf
TN6728ANZT6728CEECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.0 A.Sourced from Process 78.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage 60 V
tn6729a nzt6729.pdf
TN6729A NZT6729CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 800mA. Sourced from Process 79.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 80 VV
tn6726a nzt6726.pdf
TN6726A NZT6726CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.0 A.Sourced from Process 77.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVE
nzt6729.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
tn6715a nzt6715.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
pzt6718.pdf
PZT6718NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The PZT6718 is designed for general purpose medium power amplifier andswitching.MillimeterMillimeterREF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. 6 7 1 8D 0.02 0.10 1 6.30 6.70 Date CodeE 0 10 2 6.30 6.70 I 0.6
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050