Si i O A A Di O ZT 0 8AHi H Ai T A SiSTO iSS A Y T V V V V i V I i i I I TI D Ii i i in D D TO o a i I A SO T A i ATi S T T 8 IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZT 0 8A T i A HA A T iSTi S a Ta unI o h i a T 8 T IT DITI I T II V 8 V

Si i O A A Di O ZT 0 AHi H Ai T A SiSTO iSS A A Y T V i V I i i i I TI D D I i i in TO o a i I A SO T A i ATi S T T IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZT 0 A T i A HA A T iSTi S a Ta unI o h i a T I T IT DITI II V V I V I II i V V I

A Product Line of Diodes Incorporated ZTX1049A Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 4 A Peak Pulse Current ICM 20 A Base Current IB 500 mA Thermal Characteristics (@TA = +25C, unless ot

NPN SILICON PLANAR MEDIUM POWERZTX1053AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I V i V I I TI i i i i i D D E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1053AELECTRICAL CHARACTERISTICS (at Tamb

NPN SILICON PLANAR MEDIUM POWERZTX1055AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I V i V I I TI i i i i i i D i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1055AELECTRICAL CHARACTERISTICS (at T

NPN SILICON PLANAR MEDIUM POWERZTX1051AHIGH GAIN TRANSISTORISSUE 3 FEBRUARY 95 T V V V i V I i i I I i I TI i i i i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1051AELECTRICAL CHARACTERISTICS (at Tam

NPN SILICON PLANAR MEDIUM POWERZTX1056AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I i V I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1056AELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise sta