DISCRETE SEMICONDUCTORSDATA SHEETM3D173BFR520TNPN 9 GHz wideband transistorProduct specification 2000 Apr 03Supersedes data of 1999 Nov 02Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFR520TFEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulatedin a plastic SOT416 (SC-75) package. Low noise figure 3fpage High tr

DISCRETE SEMICONDUCTORS DATA SHEETM3D173BFR520TNPN 9 GHz wideband transistorProduct specification 2000 Apr 03Supersedes data of 1999 Nov 02NXP Semiconductors Product specificationNPN 9 GHz wideband transistor BFR520TFEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. Low noise figure 3lfpage High tr

BFR520NPN 9 GHz wideband transistorRev. 03 1 September 2004 Product data sheet1. Product profile1.1 General descriptionThe BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.1.3 Applications RF front end wideband applic

DISCRETE SEMICONDUCTORSDATA SHEETBFR520NPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFR520telephones (CT1, CT2, DECT, etc.),FEATURESradar detectors, pagers and satellite High power gainTV tuners (SATV) and repeater Low noise figu

isc Silicon NPN RF Transistor BFR520DESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless.ABSOLUTE MAXIMUM RATINGS(T =25)a