Биполярный транзистор 2DB1119S - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2DB1119S
Маркировка: P12BS
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 140
Корпус транзистора: SOT89
2DB1119S Datasheet (PDF)
2db1119s.pdf
2DB1119S PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT89-3L Mechanical Data COLLECTOR
2db1188p-q-r.pdf
2DB1188P/Q/R PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (2DD1766) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT89-3L Mechanical Data Case: SOT89-3L
2db1132p 2db1132q 2db1132r.pdf
2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -32V Case: SOT89 IC = -1A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. Complementary NPN Type: 2DD1664 UL Flammability Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level 1 per J-S
2db1184q.pdf
2DB1184QPNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: TO252-3L Low Collector-Emitter Saturation Voltage Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes
2db1132p-q-r.pdf
2DB1132P/Q/R PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (2DD1664) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT89-3L Mechanical Data Case: SOT89-3L
2db1182q.pdf
2DB1182Q32V PNP SURFACE MOUNT TRANSISTOR IN TO252 Features Mechanical Data Epitaxial Planar Die Construction Case: TO252 Low Collector-Emitter Saturation Voltage Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification
2db1188p 2db1188q 2db1188r.pdf
2DB1188P/Q/R32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -32V Case: SOT89 IC = -2A high Continuous Current Case material: Molded Plastic, "Green" Molding Compound. Low saturation voltage VCE(sat)
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050