MMBT123S datasheet, аналоги, основные параметры

Наименование производителя: MMBT123S  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.3 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Статический коэффициент передачи тока (hFE): 150

Корпус транзистора: SOT23

 Аналоги (замена) для MMBT123S

- подборⓘ биполярного транзистора по параметрам

 

MMBT123S даташит

 ..1. Size:108K  diodes
mmbt123s.pdfpdf_icon

MMBT123S

MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A SOT-23 Ideal for Medium Power Amplification and Switching C Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 B C "Green" Device (Notes 2 and 4) B 1.20 1.40 TOP VIEW B E D C 2.30 2.50 E

 9.1. Size:112K  motorola
mmbt1010 msd1010t1.pdfpdf_icon

MMBT123S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT1010LT1/D MMBT1010LT1 Low Saturation Voltage MSD1010T1 Motorola Preferred Devices PNP Silicon Driver Transistors Part of the GreenLine Portfolio of devices with energy conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy PNP GENERAL in general purpose driver applicatio

 9.2. Size:185K  fairchild semi
mmbt100.pdfpdf_icon

MMBT123S

PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier 3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. 2 SOT-23 TO-92 1 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Mark N1/N1A Mark PN100/PN100A Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Paramet

 9.3. Size:146K  fairchild semi
pn100 pn100a mmbt100 mmbt100a.pdfpdf_icon

MMBT123S

October 2008 PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 SOT-23 B 1 1. Emitter 2. Base 3. Collector Mark PN100/PN100A Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector

Другие транзисторы: FMMTL717, FMMTL718, FXT689B, FZT1047A, FZT1048A, FZT1147A, FZT1149A, FZT717, 2SC2073, MMDT4124, MMDT4126, MMDT4146, MMST4124, MMST4126, ZDT1048, ZDT1049, ZDT6718