Справочник транзисторов. MMBT123S

 

Биполярный транзистор MMBT123S Даташит. Аналоги


   Наименование производителя: MMBT123S
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 150
   Корпус транзистора: SOT23
     - подбор биполярного транзистора по параметрам

 

MMBT123S Datasheet (PDF)

 ..1. Size:108K  diodes
mmbt123s.pdfpdf_icon

MMBT123S

MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A SOT-23 Ideal for Medium Power Amplification and Switching CDim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 B C"Green" Device (Notes 2 and 4) B 1.20 1.40 TOP VIEWB ED C 2.30 2.50 E

 9.1. Size:112K  motorola
mmbt1010 msd1010t1.pdfpdf_icon

MMBT123S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT1010LT1/DMMBT1010LT1Low Saturation Voltage MSD1010T1Motorola Preferred DevicesPNP Silicon Driver TransistorsPart of the GreenLine Portfolio of devices with energyconserving traits.This PNP Silicon Epitaxial Planar Transistor is designed to conserve energyPNP GENERALin general purpose driver applicatio

 9.2. Size:185K  fairchild semi
mmbt100.pdfpdf_icon

MMBT123S

PN100/PN100A/MMBT100/MMBT100ANPN General Purpose Amplifier3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.2SOT-23TO-92 111. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Mark: N1/N1AMark: PN100/PN100AAbsolute Maximum Ratings* TC=25C unless otherwise notedSymbol Paramet

 9.3. Size:146K  fairchild semi
pn100 pn100a mmbt100 mmbt100a.pdfpdf_icon

MMBT123S

October 2008PN100/PN100A/MMBT100/MMBT100ANPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.CETO-92SOT-23B11. Emitter 2. Base 3. CollectorMark: PN100/PN100AAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCEO Collector

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BFS91A | TN3467

 

 
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