NPN SILICON PLANAR MEDIUM POWERZTX618HIGH GAIN TRANSISTORISSUE 2 JULY 1995 T I II i i I IT I I i I V I I TI T i i i i E-Line I T 8TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I i I Di i i Di i i i T T T D i i I I i i ed, applied orpply of anyZTX618ELECTRICAL CHARACT

ZTX614NPN Darlington Transistor These device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage. Sourced from process 06.CTO-226BEAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VVCBO Collector-Base Voltage 120 VVEBO Emitter-Base