ZXT10P12DE6 datasheet, аналоги, основные параметры
Наименование производителя: ZXT10P12DE6 📄📄
Маркировка: 717
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1.1 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 80 MHz
Статический коэффициент передачи тока (hFE): 300
Корпус транзистора: SOT26
Аналоги (замена) для ZXT10P12DE6
- подборⓘ биполярного транзистора по параметрам
ZXT10P12DE6 даташит
zxt10p12de6.pdf
ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6
zxt10p20de6.pdf
ZXT10P20DE6 SuperSOT 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-
zxt10p40de6.pdf
ZXT10P40DE6 40V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data BVCEO > -40V Case SOT26 IC = -2A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = -4A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(sat) = 105m for a Low Equivalent On-Resistance Moisture Sensiti
zxt10n20de6.pdf
ZXT10N20DE6 20V NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 DE6 Features Mechanical Data BVCEO > 20V Case SOT26 IC = 3.5A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 19A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 55m for a Low Equivalent On-Resistance Moisture Se
Другие транзисторы: ZTX718, ZUMT617, ZUMT618, ZUMT717, ZUMT718, ZX5T2E6, ZXT10N15DE6, ZXT10N20DE6, 2SC2625, ZXT10P20DE6, ZXT11N15DF, ZXT11N20DF, ZXT12N20DX, ZXT12P12DX, ZXT13N15DE6, ZXT13N20DE6, ZXT13P12DE6
🌐 : EN ES РУ
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
c945 datasheet | irfp260 | ksc2383 | 2n3773 | b772 transistor | 50n06 | mje350 | 2n3866







