ZXT13N15DE6 datasheet, аналоги, основные параметры
Наименование производителя: ZXT13N15DE6 📄📄
Маркировка: N15D
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1.1 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 72 MHz
Статический коэффициент передачи тока (hFE): 300
Корпус транзистора: SOT26
Аналоги (замена) для ZXT13N15DE6
- подборⓘ биполярного транзистора по параметрам
ZXT13N15DE6 даташит
zxt13n15de6.pdf
ZXT13N15DE6 SuperSOT4 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 29m ; IC= 5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6
zxt13n50de6.pdf
A Product Line of Diodes Incorporated ZXT13N50DE6 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 50V Case SOT26 IC = 4A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 10A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 36m for a Low Equivalent On-Res
zxt13n20de6.pdf
ZXT13N20DE6 20V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 20V Case SOT26 IC = 4.5A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 15A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 38m for a Low Equivalent On-Resistance Moisture Sensitivity Leve
zxt13p40de6.pdf
A Product Line of Diodes Incorporated ZXT13P40DE6 40V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data BVCEO > -40V Case SOT26 IC = -3A Max Continuous Collector Current Case Material Molded Plastic, Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 58m for a Low E
Другие транзисторы: ZXT10N15DE6, ZXT10N20DE6, ZXT10P12DE6, ZXT10P20DE6, ZXT11N15DF, ZXT11N20DF, ZXT12N20DX, ZXT12P12DX, 2SC945, ZXT13N20DE6, ZXT13P12DE6, ZXT13P20DE6, ZXT2MA, ZXTC2061E6, ZXTC2062E6, ZXTC6717MC, ZXTC6718MC
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