Биполярный транзистор ZXT13P12DE6 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: ZXT13P12DE6
Маркировка: P12D
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1.1 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Граничная частота коэффициента передачи тока (ft): 55 MHz
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: SOT26
Аналоги (замена) для ZXT13P12DE6
ZXT13P12DE6 Datasheet (PDF)
zxt13p12de6.pdf
ZXT13P12DE6SuperSOT412V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-12V; RSAT = 37m ; IC= -4ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.SOT23-6
zxt13p40de6.pdf
A Product Line ofDiodes IncorporatedZXT13P40DE6 40V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data BVCEO > -40V Case: SOT26 IC = -3A Max Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 58m for a Low E
zxt13p20de6.pdf
ZXT13P20DE6 20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data BVCEO > -20V Case: SOT26 IC = -3.5A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(sat) = 75m for a Low Equivalent On-Resistance Moisture Sensi
zxt13n50de6.pdf
A Product Line ofDiodes IncorporatedZXT13N50DE6 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 50V Case: SOT26 IC = 4A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 10A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 36m for a Low Equivalent On-Res
zxt13n15de6.pdf
ZXT13N15DE6SuperSOT415V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=15V; RSAT = 29m ; IC= 5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.SOT23-6
zxt13n20de6.pdf
ZXT13N20DE6 20V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 20V Case: SOT26 IC = 4.5A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 15A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 38m for a Low Equivalent On-Resistance Moisture Sensitivity: Leve
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050