Биполярный транзистор 2N5466 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5466
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 2.5 MHz
Ёмкость коллекторного перехода (Cc): 200 pf
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
2N5466 Datasheet (PDF)
2n5466 2n5467.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5466 2N5467 DESCRIPTION With TO-3 package High-voltage capability Fast switching speeds Low collector saturation voltage APPLICATIONS They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
2n5466.pdf
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isc Silicon NPN Power Transistor 2N5466DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
2n5460 2n5461 2n5462.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5460/DJFET Amplifiers2N5460PChannel Depletion2 DRAINthru2N54623GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainGate Voltage VDG 40 VdcReverse GateSource Voltage VGSR 40 Vdc1Forward Gate Current IG(f) 10 mAdc23Total Device Dissipation @ TA = 25C PD 350 mWDerate above 25
2n5460 2n5461 2n5462 mmbf5460 mmbf5461 mmbf5462.pdf
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2N5460 MMBF54602N5461 MMBF54612N5462 MMBF5462GSG TO-92 DSOT-23NOTE: Source & DrainSMark: 6E / 61U / 61V are interchangeableDP-Channel General Purpose AmplifierThis device is designed primarily for low level audio and generalpurpose applications with high impedance signal sources. Sourcedfrom Process 89.Absolute Maximum Ratings* TA = 25C unless otherwise noted-
2n5460 sst5460 2n5461 sst5461 2n5462 sst5462.pdf
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2N/SST5460 SeriesVishay SiliconixP-Channel JFETs2N5460 SST54602N5461 SST54612N5462 SST5462PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N/SST5460 0.75 to 6 40 1 12N/SST5461 1 to 7.5 40 1.5 22N/SST5462 1.8 to 9 40 2 4FEATURES BENEFITS APPLICATIONSD High Input Impedance D Low Signal Loss/System Error D Low-Current, Low-Voltage
2n5460 2n5461 2n5462.pdf
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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5460 2n5461 2n5462.pdf
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2N5460, 2N5461, 2N5462JFET AmplifierP-Channel - DepletionFeatures Pb-Free Packages are Available*http://onsemi.com2 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain - Gate Voltage VDG 40 VdcGATEReverse Gate - Source Voltage VGSR 40 VdcForward Gate Current IG(f) 10 mAdc1 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above 25C 2.8 mW/CJunct
2n5468.pdf
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2N5468Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n5469.pdf
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2N5469Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n5467.pdf
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2N5467Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 400V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n5468.pdf
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isc Silicon NPN Power Transistor 2N5468DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular TO-66100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
2n5469.pdf
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isc Silicon NPN Power Transistor 2N5469DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular TO-66100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
2n5468 2n5469.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5468 2N5469 DESCRIPTION With TO-66 package High-voltage capability Fast switching speeds Low saturation voltage APPLICATIONS They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66)
2n5467.pdf
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isc Silicon NPN Power Transistor 2N5467DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
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