Справочник транзисторов. BC857BLP4

 

Биполярный транзистор BC857BLP4 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BC857BLP4
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 220
   Корпус транзистора: X2-DFN1006-3

 Аналоги (замена) для BC857BLP4

 

 

BC857BLP4 Datasheet (PDF)

 ..1. Size:234K  diodes
bc857blp4.pdf

BC857BLP4
BC857BLP4

BC857BLP4 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X2-DFN1006-3 BVCEO > -45V Case Material: Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13

 6.1. Size:380K  diodes
bc857blp.pdf

BC857BLP4
BC857BLP4

BC857BLP 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BVCEO > -45V Case Material: Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13

 7.1. Size:140K  infineon
bc856a bc856b bc856bw bc857a bc857b bc857bf bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bl3 bc858bw bc858c bc858cw bc859b bc859c bc860b bc860bw bc860cw.pdf

BC857BLP4
BC857BLP4

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 7.2. Size:861K  infineon
bc857a bc857b bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bw bc858c bc858cw bc859c bc860b bc860bw bc860cw.pdf

BC857BLP4
BC857BLP4

BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

 7.3. Size:858K  infineon
bc857bl3.pdf

BC857BLP4
BC857BLP4

BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

 7.4. Size:148K  onsemi
bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858blt3g bc859blt1g bc859clt1g.pdf

BC857BLP4
BC857BLP4

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 7.5. Size:86K  onsemi
nsvbc857blt3g.pdf

BC857BLP4
BC857BLP4

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2EMITTERMAXIMUM RATINGS (TA = 25C unless other

 7.6. Size:209K  onsemi
bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858clt1g bc859blt1g bc859clt1g.pdf

BC857BLP4
BC857BLP4

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 7.7. Size:801K  onsemi
bc856blt1g bc857clt3g bc856blt3g bc857blt1g bc857blt3g bc858blt3g bc858alt1g bc857clt1g.pdf

BC857BLP4
BC857BLP4

BC856ALT1G Series,SBC856ALT1G SeriesGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGS

 7.8. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf

BC857BLP4
BC857BLP4

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 7.9. Size:234K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdf

BC857BLP4
BC857BLP4

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 7.10. Size:234K  lrc
lbc856alt1g lbc856alt3g lbc856blt1g lbc856blt3g lbc857alt1g lbc857alt1g lbc857blt1g lbc857blt3g lbc857clt1g lbc857clt1g.pdf

BC857BLP4
BC857BLP4

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 7.11. Size:158K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859clt1g.pdf

BC857BLP4
BC857BLP4

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit

 7.12. Size:148K  lrc
lbc857blt1g.pdf

BC857BLP4
BC857BLP4

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon Series Moisture Sensitivity Level: 1S-LBC857CLT1G ESD Rating Human Body Model: >4000 V SeriesESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other Applications Requiring Unique Site a

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