BC857BT. Аналоги и основные параметры
Наименование производителя: BC857BT
Маркировка: 3F_3W_GT9
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hFE): 125
Корпус транзистора: SOT523
Аналоги (замена) для BC857BT
- подборⓘ биполярного транзистора по параметрам
BC857BT даташит
bc857at bc857bt bc857ct.pdf
BC857AT, BT, CT 45V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -45V Case SOT523 Case Material Molded Plastic. Green Molding Compound. IC = -100mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Ter
bc857btt1 bc857ctt1.pdf
BC857BTT1, BC857CTT1 Preferred Devices General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR Pb-Free Package is Available* 3 1 BASE MAXIMUM RATINGS (TA = 25 C) Rating Symbol Max Unit
bc857btt1g.pdf
BC857BTT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualifi
nsvbc857btt1g.pdf
BC857BTT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualifi
Другие транзисторы: BC847BVC, BC847CDLP, BC847CT, BC848CT, BC857AT, BC857BLP, BC857BLP4, BC857BS, C3198, BC857BV, BC857CT, BCP5110, BCP5116, BCP5410, BCP5416, BCX5110, BCX5116
History: BC857BLP4 | 3DD2553 | STW13009
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Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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