Биполярный транзистор DPLS350E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DPLS350E
Маркировка: P35
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: SOT223
DPLS350E Datasheet (PDF)
dpls350e.pdf
DPLS350ELOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-223 Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switchi
dpls350e.pdf
SMD Type TransistorsPNP TransistorsDPLS350E (KPLS350E)Unit:mmSOT-2236.500.23.000.1 Features4 Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-50V Complementary to DNLS350E1 2 3COLLECTOR2,40.2502.30 (typ)Gauge Plane1.Base1 2.CollectorBASE0.700.13.Emitter4.60 (typ) 4.Collector3EMITTER Absolute Maxim
dpls350y.pdf
DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -50V Case: SOT89 IC = -3A High Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound ICM up to -5A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturatio
dpls315e.pdf
DPLS315EDPLS315E LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 300 at IC = 2A Complementary NPN Type Available (DNLS412E) Ideally Suited for Automated Assembly Proces
dpls320a.pdf
DPLS320A LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complimentary NPN Type Available (DNLS320A) Lead Free By Design/RoHS Compliant (Note 1) Green Device (Note 2) Qualified to AEC-Q101 Standards fo
dpls325e.pdf
DPLS325E LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 200 at IC = 2A Complementary NPN Type Available (DNLS320E) Ideally Suited for Automated Assembly Processes
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050